Resistive memory devices are new type of non-volatile memory devices that can be switched between high resistance state (HRS) and low resistance state (LRS) under the action of an external electric field. The selection and interaction of electrode materials and active layer materials are the main factors for realizing the resistive switching characteristics of devices. Graphene is a two-dimensional (2D) material with excellent electrical conductivity and high ductility. Reduction of graphene oxide (GO) by laser processing is an excellent method to obtain graphene efficiently. The preparation process of traditional memory devices is complicated, which is not conducive to large-scale processing and manufacturing. Using metal Au and reduced graphene oxide (rGO) as electrodes, and GO as the active layer for device fabrication, the resistive switching function of the memory device is well realized. The simple and efficient fabrication method provides a reference for the large-scale and highly integrated production of resistive memory devices.