Chinese Journal of Quantum Electronics, Volume. 22, Issue 5, 673(2005)

Research and development of high brightness GaN-based blue LED and white LED

[in Chinese]*... [in Chinese] and [in Chinese] |Show fewer author(s)
Author Affiliations
  • [in Chinese]
  • show less
    References(14)

    [5] [5] Fang Zhilie. Semiconductor Lighting Materials and Devices [M]. Shanghai: Fudan University press, 1992.

    [13] [13] Mukai T. Recent progress in group-Ⅲ nitride light-emitting diodes [J]. IEEE J. Select. Topics Quantum Electron.,2002, 8(2): 264-270.

    [14] [14] Koike M, Shibata N, Kato H, et al. Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications [J]. IEEE J. Select. Topics Quantum Electron., 2002, 8(2): 271-277.

    [15] [15] Lai Weichih, Chang Shooujinn, Meiso Yokoyam, et al. InGaN-AlInGaN multiquantum-well LEDs [J]. IEEE Photon. Technol. Lett. 2001, 13(6): 559-561.

    [16] [16] Sheu J K, Chi G C, Jou M J. Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer [J]. IEEE Photon. Technol.Lett. 2001,13(11):1164-1166.

    [17] [17] Jeon Seongran, Cho Myongsoo, Yu Mina, et al. GaN-based light-emitting diodes using tunnel junctions [J]. IEEE J. Select. Topics Quantum Electron., 8(4): 739-743.

    [18] [18] Lee Chiaming, Chuo Changcheng, Chen Iling, et al. High-brightness inverted InGaN-GaN multiple-quantumwell light-emitting diodes without a transparent conductive layer [J]. IEEE Electron. Device Lett. 2003, 24(3):156-158.

    [19] [19] Subramanian Muthu, Schuurmans F J, Pashley M D. Red, green, and blue LED based white light generation:Issues and control [C]∥Industry Applications Conference, 2002. 37th IAS Annual Meeting, 2002, 13-18.

    [20] [20] Regina M M, Mueller G O, Krames M R, et al. High-power phosphor-converted light-emitting diodes based on Ⅲ-Nitrides [J]. IEEE J. Select. Topics Quantum Electron., 2002, 8(2): 339-345.

    [21] [21] Chen C H, Chang S J, Su Y K, et al. Nitride-based cascade near white light-emitting diodes [J]. IEEE Photon.Technol. Lett. 2002, 14(7): 908-910.

    [22] [22] Sheu J K, Pan C J, Chi G C, et al. White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer [J]. IEEE Photon. Technol. Lett. 2002, 14(4): 450-452.

    [23] [23] Nishida T, Ban T, Kobayashi N. High-color-rending light sources consisting of a 350-nm ultraviolet light-emitting diode and three-basal-color phosphors [J]. Appl. Phy. Lett., 2003, 82(22): 3817-3819.

    [24] [24] Nakamura S. Ⅲ-Ⅴ nitride-based LEDs and lasers: current status and future opportunities [C]∥ Electron Devices Meeting, 2000. IEDM Technical Digest. International. Dec. 2000.

    [25] [25] Guo Xiaoyun, Graff J, Schubert F E. Photon recycling semiconductor light emitting diode [J]. IEDM Tech. Dig.,1999: 600-605.

    Tools

    Get Citation

    Copy Citation Text

    [in Chinese], [in Chinese], [in Chinese]. Research and development of high brightness GaN-based blue LED and white LED[J]. Chinese Journal of Quantum Electronics, 2005, 22(5): 673

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Sep. 25, 2004

    Accepted: --

    Published Online: May. 15, 2006

    The Author Email: (lightingbug@sohu.com)

    DOI:

    Topics