Microelectronics, Volume. 53, Issue 2, 216(2023)
A 4×112 Gbit/s PAM-4 Transimpedance Amplifier Based on 90 nm SiGe BiCMOS Process
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CHEN Zhe. A 4×112 Gbit/s PAM-4 Transimpedance Amplifier Based on 90 nm SiGe BiCMOS Process[J]. Microelectronics, 2023, 53(2): 216
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Received: Apr. 1, 2022
Accepted: --
Published Online: Dec. 15, 2023
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