Journal of Semiconductors, Volume. 46, Issue 2, 022407(2025)

Optoelectronic memristor based on a-C:Te film for muti-mode reservoir computing

Qiaoling Tian1... Kuo Xun1, Zhuangzhuang Li1, Xiaoning Zhao1,*, Ya Lin1, Ye Tao1, Zhongqiang Wang1,**, Daniele Ielmini2, Haiyang Xu1 and Yichun Liu1 |Show fewer author(s)
Author Affiliations
  • 1Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
  • 2Dipartimento di Elettronica and Informazione e Bioingegneria, Politecnico di Milano, Milano 20133, Italy
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    Figures & Tables(4)
    (Color online) (a) and (b) Schematic diagram and cross-sectional SEM image of the Au/a-C:Te/Pt optoelectronic memristor. (c) and (d) XPS spectra of the Te 3d and C 1s core levels of the a-C:Te thin film. (e) and (f) Absorption spectra of the a-C and a-C:Te thin film.
    (Color online) (a) Schematic diagram of Au/a-C:Te/Pt optoelectronic memristor with electrical stimulation. (b) EPSC response of the memristor under different voltage amplitudes (2.0, 3.0, 3.5, and 4.0 V). (c) PPF response using paired electrical pulses (V = 4 V, W = 20 μs, Δt = 40 μs). (d) The dependence between PPF index and electrical pulse intervals. (e) Response current for various voltage pulse numbers at a fixed amplitude (V = 4 V, W = 10 μs, Δt = 10 μs). (f) The output currents response to electrical pulse sequences of 1000, 1110, and 1111. (g) The distinguishable response currents of 4-bit electrical pulse sequences. (h) The input figure "0"−"9" are converted into response currents related to different reservoir states.
    (Color online) (a) Schematic diagram of the Au/a-C:Te/Pt optoelectronic memristor with optical stimulation. (b) EPSC response of the memristor with different intensities (25, 35, 60, 100, and 150 mW/cm2) of optical pulse. (c) PPF index dependent on optical pulse interval. (d) The distinguishable response current of 4-bit optical pulse sequences. (e) Schematic illustration of the possible working mechanism of the Au/a-C:Te/Pt optoelectronic memristor under electrical and optical stimulation.
    (Color online) (a) Sensing Chinese character in complex environments. The left half and the right half of information can only be sensed by optical (visual) and electrical (tactile) signals, respectively. (b) Recognition accuracy in single mode (tactile or visual) RC system and multi-mode (tactile-visual fusion) RC system. (c) The confusion matrix for muti-mode RC system.
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    Qiaoling Tian, Kuo Xun, Zhuangzhuang Li, Xiaoning Zhao, Ya Lin, Ye Tao, Zhongqiang Wang, Daniele Ielmini, Haiyang Xu, Yichun Liu. Optoelectronic memristor based on a-C:Te film for muti-mode reservoir computing[J]. Journal of Semiconductors, 2025, 46(2): 022407

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    Paper Information

    Category: Research Articles

    Received: Oct. 9, 2024

    Accepted: --

    Published Online: Mar. 28, 2025

    The Author Email: Zhao Xiaoning (XNZhao), Wang Zhongqiang (ZQWang)

    DOI:10.1088/1674-4926/24100008

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