As the manufacturing process of silicon-based integrated circuits (ICs) approaches its physical limit, the quantum effect of silicon-based field-effect transistors (FETs) has become increasingly evident. And the burgeoning carbon-based semiconductor technology has become one of the most disruptive technologies in the post-Moore era. As one-dimensional nanomaterials, carbon nanotubes (CNTs) are far superior to silicon at the same technology nodes of FETs because of their excellent electrical transport and scaling properties, rendering them the most competitive material in the next-generation ICs technology. However, certain challenges impede the industrialization of CNTs, particularly in terms of material preparation,which significantly hinders the development of CNT-based ICs. Focusing on CNT-based ICs technology, this review summarizes its main technical status, development trends, existing challenges, and future development directions.