Chip, Volume. 3, Issue 3, 100101(2024)

Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications

Ming-Hao Shao1、†, Rui-Ting Zhao1、†, Houfang Liu†、*, Wen-Jia Xu, Yi-Da Guo, Da-Peng Huang, Yu-Zhe Yang, Xin-Ru Li, Wancheng Shao, Peng-Hui Shen, Junwei Liu, Kuanmao Wang, Jinguo Zheng, Zhao-Yi Yan, Jian-Lan Yan, Tian Lu, Yi Yang, and Tian-Ling Ren**
Author Affiliations
  • School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
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    Ming-Hao Shao, Rui-Ting Zhao, Houfang Liu, Wen-Jia Xu, Yi-Da Guo, Da-Peng Huang, Yu-Zhe Yang, Xin-Ru Li, Wancheng Shao, Peng-Hui Shen, Junwei Liu, Kuanmao Wang, Jinguo Zheng, Zhao-Yi Yan, Jian-Lan Yan, Tian Lu, Yi Yang, Tian-Ling Ren. Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications[J]. Chip, 2024, 3(3): 100101

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    Paper Information

    Category: Research Articles

    Received: Apr. 8, 2024

    Accepted: Jun. 11, 2024

    Published Online: Nov. 12, 2024

    The Author Email: Liu Houfang (houfangliu@tsinghua.edu.cn), Ren Tian-Ling (rentl@tsinghua.edu.cn)

    DOI:10.1016/j.chip.2024.100101

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