Analysis of Saturation Characteristics of Silicon-Based Photodiodes Irradiated by Picosecond Laser

Meng Yao; Jifei Ye; Lan Li; Heyan Gao

doi:10.3788/LOP202259.1304003

Laser & Optoelectronics Progress, Volume. 59, Issue 13, 1304003(2022)

Analysis of Saturation Characteristics of Silicon-Based Photodiodes Irradiated by Picosecond Laser

Meng Yao, Jifei Ye^*, Lan Li, and Heyan Gao

State Key Laboratory of Laser Propulsion & Application, Department of Aerospace Science and Technology, Aerospace Engineering University, Beijing 101416, China

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References(1)

[3] Watkins S E, Zhang C Z, Walser R M et al. Electrical performance of laser damaged silicon photodiodes[J]. Applied Optics, 29, 827-835(1990).

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Meng Yao, Jifei Ye, Lan Li, Heyan Gao. Analysis of Saturation Characteristics of Silicon-Based Photodiodes Irradiated by Picosecond Laser[J]. Laser & Optoelectronics Progress, 2022, 59(13): 1304003

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Paper Information

Category: Detectors

Received: Jul. 17, 2021

Accepted: Sep. 3, 2021

Published Online: Jun. 9, 2022

The Author Email: Ye Jifei (yjf1981@163.com)

DOI:10.3788/LOP202259.1304003

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology