The radiation in the space environment will degrade the performance of CMOS image sensors, even result in permanent damage. In this paper, the radiation harden techniques are proposed from the aspects of layout and circuit designs, and experiments of total-dose and signal-event were carried out on the samples. Experimental results show the CMOS image sensors fabricated with radiation-harden technology realize total-dose resilience up to 100krad(Si) and single-event effect resilience up to 1×107p/cm2, meeting the requirement on radiation hardened design.