Photonics Research, Volume. 8, Issue 6, 899(2020)

Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates

Linzhi Peng1,2, Xiuli Li1,2, Zhi Liu1,2、*, Xiangquan Liu1,2, Jun Zheng1,2, Chunlai Xue1,2, Yuhua Zuo1,2, and Buwen Cheng1,2,3
Author Affiliations
  • 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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    References(37)

    [21] Z. Liu, B.-W. Cheng, Y.-M. Li, C.-B. Li, C.-L. Xue, Q.-M. Wang. Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate. Chin. Phys. B, 22, 116804(2013).

    [26] S. L. Chuang. Physics of Optoelectronic Devices(1995).

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    Linzhi Peng, Xiuli Li, Zhi Liu, Xiangquan Liu, Jun Zheng, Chunlai Xue, Yuhua Zuo, Buwen Cheng. Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates[J]. Photonics Research, 2020, 8(6): 899

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    Paper Information

    Category: Silicon Photonics

    Received: Dec. 30, 2019

    Accepted: Apr. 2, 2020

    Published Online: May. 18, 2020

    The Author Email: Zhi Liu (zhiliu@semi.ac.cn)

    DOI:10.1364/PRJ.386996

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