Fig. 1. Geometric model

Fig. 2. Distributions of three-dimensional temperature field at different moments (a) ; (b) 不同时刻下的三维温度场分布。(a) ；(b)

Fig. 3. Sketch map of node positions

Fig. 4. Different temperatures of the positions as the time change

Fig. 5. Rate of temperature changes at different points. (a) Center of spot; (b) Point B at the edge of the laser beam

Fig. 6. Three-dimensional temperature field distributions at different moments. (a) ; (b) ; (c) ; (d) ; (e) ; (f) 不同时刻下的三维温度场分布。(a) ; (b) ; (c) ; (d) ; (e) ; (f)

Fig. 7. Temperature at different locations changes with time. (a) Horizontal direction point A，B，C; (b) Vertical direction point C，D，E

Fig. 8. Influence of the number of pulses on the size of cladding layer

Fig. 9. Rate of temperature change at different locations changes with time. (a) Point A; (b) Point B

Fig. 10. Cmparison with the characters of single and multi-pulse laser cladding of Si film. (a) Morphology of single pulse cladding of Si film; (b) Morphology of single pulse cladding after remove redundant Si film; (c) Morphology of muti-pulse cladding of Si film; (d) Morphology of muti-pulse cladding after remove redundant Si film; Morphology of back surface field form by (e) single pulse laser cladding and (f) muti-pulse laser cladding

Fig. 11. B atoms concentration in Si substrate after laser doping measured by ECV