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Acta Physica Sinica, Volume. 68, Issue 3, 038501-1(2019)

Total ionizing dose effects of γ and X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell

Yang Cao1, Kai Xi2, Yan-Nan Xu1,2, Mei Li2, Bo Li2, Jin-Shun Bi1,2、*, and Ming Liu2
Author Affiliations
  • 1University of Chinese Academy of Sciences, Beijing 100049, China
  • 2Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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    Yang Cao, Kai Xi, Yan-Nan Xu, Mei Li, Bo Li, Jin-Shun Bi, Ming Liu. Total ionizing dose effects of γ and X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell [J]. Acta Physica Sinica, 2019, 68(3): 038501-1

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    Paper Information

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    Received: Sep. 5, 2018

    Accepted: --

    Published Online: Oct. 28, 2019

    The Author Email:

    DOI:10.7498/aps.68.20181661

    Topics

    Nuclear physics
    Particles and fields
    Particle and nuclear astrophysics and cosmology