Journal of Inorganic Materials, Volume. 36, Issue 6, 570(2021)
Figures & Tables(12)
1. Schematic diagram of (a) MWSS cut technique and (b) DWS cut technique
2. SEM images of (a, b) MWSS cut and (c, d) DWS cut multicrystalline silicon wafer surface
3. Surface SEM morphology and reflectivity for texture surface of silicon wafer by acid etching
5. SEM images of silicon surfaces with (a) nano-texture, (b) micro-texture and (c) nano-micro-texture[31]
6. (a) Schematic illustration of the main steps to prepare the submicron-in-micron (SIM) texture on the DWS mc-Si wafer and (b) experimental reflectance (curves) and simulated reflectance (scatter points) of three samples[33]
7. Surface and cross-sectional SEM images of mc-Si grains after etching by alkali, Ag-MCCE and post-etching with different orientations[34]
8. SEM images of Si nanostructures produced by Cu-MCCE method (a,b) before and (c,d) after the post-processing treatment and (e) schematic diagram of post-processing treatment[41]
9. Cross-sectional SEM images of Si wafers after (a) Ag-MCCE and (b) Cu-MCCE, and (c) schematics of etching process by single Cu- and Ag-catalyzed chemical etching and Ag/Cu-cocatalyzed chemical etching[45]
Table 1. Performances for texture surfaces of DWS cut multicrystalline silicon prepared
via different MCCE methodsView tableView in ArticleTable 1. Performances for texture surfaces of DWS cut multicrystalline silicon prepared
via different MCCE methodsCatalyst Method Ra ηb Ref. Ag Ag-MCCE + HF/HNO3+NaOH 15.9% 18.45% [ 31 ]Ag Artificial defects (HF/HNO3/AgNO3)+HF/HNO3 19% 19.07% [ 33 ]Ag Alkali etching+Ag-MCCE+post etching 16.85% 19.4% [ 34 ]Ag Ag deposition (additive)+etching 16.04% 19.51% [ 35 ]Ag Ag deposition+etching (additive) 18.17% 19.56% [ 36 ]Ag HF/HNO3+Ag-MCCE+RIE - 20.69% [ 56 ]Ag Ag-MCCE 23.7% 20.89% [ 57 ]Ag Ag-MCCE+Modification by acid etching 19.46% 19.07% [ 58 ]Ag HF/HNO3+Ag-MCCE+NSR process 8.26% 17.96% [ 59 ]Ag HF/HNO3+Ag-MCCE+HF/HNO3 18.4% 18.7% [ 60 ]Cu Cu-MCCE+post etching (HF/HNO3/H3PO4) - 18.88% [ 41 ]Cu Cu-MCCE+HF/HNO3 18.21% 19.06% [ 42 ]Cu Cu-MCCE 22.4% 19.03% [ 61 ]Ag-Cu Cu/Ag-MCCE 12.08% 19.49% [ 45 ]Ag-Cu Alkali pretreatment (additive)+Cu/Ag-MCCE+post etching 15.52% 18.91% [ 62 ]Ag-Cu Cu/Ag-MCCE + NSR (H2O2/NaF) 16.50% 18.71% [ 63 ]Ag-Cu Cu/Ag-MCCE + NSR (H2O2/NaF) 16.85% 19.10% [ 64 ]Ni Ni-MCCE - 16.60% [ 47 ]Cu-Ni Cu/Ni-MCCE (Cu(NO3)2+NiSO4+HF+H2O2) 18.53% - [ 48 ]
Table 2. Comparison of making texture surface on DWS cut multicrystalline silicon by different MCCE methods
View tableView in ArticleTable 2. Comparison of making texture surface on DWS cut multicrystalline silicon by different MCCE methods
Method Advantages Disadvantages η Ag-MCCE Mature technology, easy to form nanostructure, stable performance High cost, difficult to recycle waste liquid 20.89% Cu-MCCE Low cost, easy to remove residual Cu, significantly reduce the impact of saw marks Easy to form the dense film, decreased etching rate, essential oxidants 19.06% MCCE-additive Uniform size, stable performance Organic compounds increasing the cost of waste liquid treatment 19.56% Composite MCCE Composite structure Complicated process, and difficult to recycle the waste liquid 19.49% Other metal-MCCE Low cost, composite structure Inmature 16.60%
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Xiaowei WU, Jiayan LI.
Paper Information
Category: REVIEW
Received: Jun. 30, 2020
Accepted: --
Published Online: Nov. 25, 2021
The Author Email: LI Jiayan (lijiayan@dlut.edu.cn)
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