Fig. 1. Basic laminated structure of GaN-based Micro-LED with vertical sidewalls based on FDTD method

Fig. 2. Micro-LED LEE varying with number of electric dipole locations

Fig. 3. Total LEE, top LEE and sidewall LEE varying with chip size of Micro-LED

Fig. 4. Simulation model of electric dipole representing light radiation in air

Fig. 5. Electric field intensity distribution under different d. (a) d=115 nm; (b) d=138 nm; (c) d=161 nm; (d) d=184 nm; (e) d=207 nm

Fig. 6. Simulation model of electric dipole in MQW layer

Fig. 7. LEE under different d

Fig. 8. Electric field intensity distribution in Micro-LED laminated structure under constructive interference and destructive interference. (a) Constructive interference; (b) destructive interference

Fig. 9. Simulation models of Micro-LED with different chip shapes. (a) Schematic diagram of inverted trapezoidal model; (b) schematic diagram of positive trapezoidal model

Fig. 10. Top LEE varying with α

Fig. 11. Simulation structure diagram of inverted trapezoidal Micro-LED with DBR reflector at bottom

Fig. 12. Simulation results of DBR reflector. (a) Structural diagram of DBR; (b) reflectivity; (c) electric field intensity distribution

Fig. 13. LEE varying with number of DBR layers

Fig. 14. Simulation results of Micro-LED with Ag reflector and DBR reflector. (a) Comparison of top LEE and sidewall LEE; (b) comparison of light intensity distribution; (c) electric field intensity distribution of Micro-LED with Ag reflector at α=24°; (d) electric field intensity distribution of Micro-LED with DBR at α=24°

Fig. 15. Simulation structure diagram of Micro-LED with top grating structure

Fig. 16. Influence of height of top grating with different periods on LEE improvement of Micro-LED. (a) p=500 nm; (b) p=600 nm; (c) p=700 nm