Acta Optica Sinica, Volume. 34, Issue 10, 1031003(2014)
Application of Spectroscopic Ellipsometry for the Study of Electrical and Optical Properties of Indium Tin Oxide Thin Films
The dielectric function transformation of ITO thin films caused by different substrates and post annealing temperatures is studied by spectroscopic ellipsometry measurement using Drude and Tauc-Lorentz combined modes. By comparing with the Hall effect measurement results and optical bandgap values calculated from transmittance and reflectance spectra, it is found that the influences on the dielectric functions from the carrier concentration and optical bandgap values occur at infrared and ultraviolet wavelength regions, respectively. The relationship between the dielectric functions and carrier concentration and optical bandgap is deducted by studying the dielectric functions at low and high energy regions. This study provides a new technological way to analysis the electrical and optical properties of ITO thin films by non-contact spectroscopic ellipsometry measurements.
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Hu Hui, Zhang Liping, Meng Fanying, Liu Zhengxin. Application of Spectroscopic Ellipsometry for the Study of Electrical and Optical Properties of Indium Tin Oxide Thin Films[J]. Acta Optica Sinica, 2014, 34(10): 1031003
Category: Thin Films
Received: Apr. 4, 2014
Accepted: --
Published Online: Sep. 9, 2014
The Author Email: Hui Hu (huhui@mail.sim.ac.cn)