Fig. 1. Two-dimensional phase diagram as calculated in a one-mode approximation (hatched areas in the figure correspond to coexistence regions).单模近似下的二维相图(图中阴影部分表示两相区)

Fig. 2. Simulation of relaxation process under the conditions of temperature r = –0.25 at (a) n = 300, (b) n = 800, (c) n = 15000, (d) n = 29450. r = –0.25条件下弛豫过程模拟　(a) n = 300; (b) n = 800; (c) n = 15000; (d) n = 29450

Fig. 3. Snapshot of two grains with an orientation angle of 2.8°.两晶粒形成夹角为2.8°的位向角

Fig. 4. Simulation of grain boundary dislocation under different temperature conditions at 29500 steps of relaxation process: (a) r = –0.23; (b) r = –0.25; (c) r = –0.28; (d) r = –0.30 弛豫过程29500步时不同温度条件下晶界位错模拟图　(a) r = –0.23; (b) r = –0.25; (c) r = –0.28; (d) r = –0.30

Fig. 5. Effect of temperature on the change of free energy of relaxation process system.温度对弛豫过程体系自由能变化的影响

Fig. 6. Simulation diagram of grain boundary dislocation motion under stress with r = –0.23: (a) n = 5500; (b) n = 10900; (c) n = 11350; (d) n = 13350; (e) n = 13850; (f) n = 24450. 应力作用下r = –0.23时晶界位错运动模拟图　(a) n = 5500; (b) n = 10900; (c) n = 11350; (d) n = 13350; (e) n = 13850; (f) n = 24450

Fig. 7. Simulation diagram of grain boundary dislocation motion under stress with r = –0.25: (a) n = 11100; (b) n = 11550; (c) n = 13600; (d) n = 13850; (e) n = 14100; (f) n = 25150. 应力作用下r = –0.25时晶界位错运动模拟图　(a) n = 11100; (b) n = 11550; (c) n = 13600; (d) n = 13850; (e) n = 14100; (f) n = 25150

Fig. 8. Simulation diagram of grain boundary dislocation motion under stress with r = –0.28: (a) n = 11800; (b) n = 12050; (c) n = 13800; (d) n = 29050; (e) n = 33450; (f) n = 33700. 应力作用下r = –0.28时晶界位错运动模拟图　(a) n = 11800; (b) n = 12050; (c) n = 13800; (d) n = 29050; (e) n = 33450; (f) n = 33700

Fig. 9. Simulation diagram of grain boundary dislocation motion under stress with r = –0.30: (a) n = 11300; (b) n = 12100; (c) n = 12500; (d) n = 39550; (e) n = 40100; (f) n = 76500. 应力作用下r = –0.30时晶界位错运动模拟图　(a) n = 11300; (b) n = 12100; (c) n = 12500; (d) n = 39550; (e) n = 40100; (f) n = 76500

Fig. 10. Simulation diagram under different temperature conditions at n = 11200: (a) r = –0.23; (b) r = –0.25; (c) r = –0.28; (d) r = –0.30. 11200步时不同温度条件下的模拟图　(a) r = –0.23; (b) r = –0.25; (c) r = –0.28; (d) r = –0.30

Fig. 11. Free energy curve of system under different degrees of temperature: (a) r = –0.23; (b) r = –0.25; (c) r = –0.28; (d) r = –0.30 不同温度下体系自由能曲线图　(a) r = –0.23; (b) r = –0.25; (c) r = –0.28; (d) r = –0.30