Electrolyte-gated optoelectronic transistors for neuromorphic applications

Jinming Bi; Yanran Li; Rong Lu; Honglin Song; Jie Jiang

doi:10.1088/1674-4926/24090042

Journal of Semiconductors, Volume. 46, Issue 2, 021401(2025)

Electrolyte-gated optoelectronic transistors for neuromorphic applications

Jinming Bi¹, Yanran Li¹, Rong Lu¹, Honglin Song¹, and Jie Jiang^1,2、*

Author Affiliations

¹Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, China

²State Key Laboratory of Precision Manufacturing for Extreme Service Performance, College of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China

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Jinming Bi, Yanran Li, Rong Lu, Honglin Song, Jie Jiang. Electrolyte-gated optoelectronic transistors for neuromorphic applications[J]. Journal of Semiconductors, 2025, 46(2): 021401

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Paper Information

Category: Research Articles

Received: Sep. 22, 2024

Accepted: --

Published Online: Mar. 28, 2025

The Author Email: Jiang Jie (JJiang)

DOI:10.1088/1674-4926/24090042

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