Chinese Journal of Quantum Electronics, Volume. 23, Issue 6, 876(2006)
Effect of crystallization temperature in infilling of InP in SiO2 artificial opals
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CHANG Wei, FAN Guang-han, TAN Chun-hua, LI Shu-ti, LEI Yong, HUANG Kun, ZHENG Pin-qi, CHEN Yu-bin. Effect of crystallization temperature in infilling of InP in SiO2 artificial opals[J]. Chinese Journal of Quantum Electronics, 2006, 23(6): 876
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Received: Aug. 30, 2005
Accepted: --
Published Online: Jun. 7, 2010
The Author Email: Wei CHANG (changweiscnu@163.com)
CSTR:32186.14.