Effect of crystallization temperature in infilling of InP in SiO<SUB>2</SUB> artificial opals

Wei CHANG; Guang-han FAN; Chun-hua TAN; Shu-ti LI; Yong LEI; Kun HUANG; Pin-qi ZHENG; Yu-bin CHEN

Chinese Journal of Quantum Electronics, Volume. 23, Issue 6, 876(2006)

Effect of crystallization temperature in infilling of InP in SiO₂ artificial opals

Wei CHANG^*, Guang-han FAN, Chun-hua TAN, Shu-ti LI, Yong LEI, Kun HUANG, Pin-qi ZHENG, and Yu-bin CHEN

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[in Chinese]

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SiO₂ artificial opal templates are fabricated,and metal organic chemical vapour deposition is used to infill the voids of prepared silica colloidal crystals with InP. The samples are characterized by scanning electron microscopy and UV-VIS spectroscopy. The results show that the crystallization temperature is an important factor in the infilling of InP. By the increasing of crystallization temperature,the infilling ratio of InP decreases.

Keywords

artificial opal metal organic chemical vapor deposition optoelectronics photonic crystal temperature

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CHANG Wei, FAN Guang-han, TAN Chun-hua, LI Shu-ti, LEI Yong, HUANG Kun, ZHENG Pin-qi, CHEN Yu-bin. Effect of crystallization temperature in infilling of InP in SiO₂ artificial opals[J]. Chinese Journal of Quantum Electronics, 2006, 23(6): 876

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Paper Information

Category:

Received: Aug. 30, 2005

Accepted: --

Published Online: Jun. 7, 2010

The Author Email: Wei CHANG (changweiscnu@163.com)

DOI:

CSTR:32186.14.

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology