[1] [1] Zeng Gehong. The arduous journey and brilliant achievements of HgCdTe: 1. great invention[J]. Infrared Technology, 2011, 33(5): 249-251. (in Chinese)

[2] [2] Nemirovsky Y, Bahir G. Passivation of mercury cadmium telluride surfaces[J]. J Vac Sci Technol A, 1989, 7(2): 450-459.

[3] [3] Kumar V, Pal R, Chaudhury P K, et al. A CdTe passivation process for long wavelength infrared HgCdTe photo-detectors[J]. Journal of Electronic Materials, 2005, 34(9): 1225-1229.

[4] [4] Wang Nili, Liu Shijia, Lan Tianyi, et al. The interfacial properties of AOF/ZnS and LWIR bulk HgCdTe materials by MIS structures[C]//SPIE, 2012, 8419: 84191D-1-84191D-5.

[5] [5] Yuan Haoxin, Tong Feiming, Tang Dingyuan. Electrical properties of p-type HgCdTe/ZnS interfaces [J]. Optical Engineerin, 1993, 32: 608-612.

[6] [6] Zhang Xinchang, Zheng Guozhen, Guo Shaoling, et al. Interface electrical characteristics of passivation films on HgCdTe[C]//SPIE, 1998, 3175: 183-185.

[7] [7] Kim J S, Song J H, Su S H. Electrical properties of ZnS, CdTe/HgCdTe interfaces evaporated from effusion cell in UHV chamber[C]//SPIE, 2000, 4130: 816-822.

[8] [8] Qiao Hui, Xu Guoqing, Jia Jia, et al. Surface passivation of variable-area HgCdTe photovoltaic detectors[J]. Journal of Semiconductors, 2008, 29(7): 1383-1386. (in Chinese)

[9] [9] Xu Jingjie, Chen Xingguo, Zhou Songmin, et al. Advanecd CdTe passivation layer deposited by evaporation on HgCdTe infrared detectors[J]. Laser & Infrared, 2012, 42(11): 1263-1267. (in Chinese)

[10] [10] Han Fuzhong, Geng Song, Shi Qi, et al. Passivation technology of composite film on the HgCdTe IRFPA[J]. Infrared Technology, 2015, 37(10): 864-867. (in Chinese)

[11] [11] Xu Jingjie, Li Haibin, Chen Xingguo, et al. Characterization of CdTe passivation layers grown by evaporation with thermal treatments[C]//SPIE, 2011, 8193: 81933A-1-81933A-7.

[12] [12] Licausi N, Rao S, Bhat I. Low-pressure chemical vapor deposition of CdS and atomic layer deposition of CdTe films for HgCdTe surface passivation[J]. Journal of Electronic Materials, 2011, 40(8): 1668-1673.

[13] [13] Xu Jingjie, Zhou Songmin, Chen Xingguo, et al. Improvement of CdTe passivation by vacuum evaporation on HgCdTe infrared focal plane arrays[C]//SPIE, 2012, 8419: 84192D-1-84192D-6.

[14] [14] Ye Zhenhua, Huang Jian, Yin Wenting, et al. HgCdTe photodiode arrays passivated byMBE in-situ grown CdTe film[J]. Journal of Infrared and Millimeter Waves, 2011, 30(6): 495-498. (in Chinese)

[15] [15] Voitsekhovskii A V, Nesmelov S N, Dzyadukh S M. Capacitance-voltage characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe with various insulators[J]. Thin Solid Films, 2012, 522: 261-266.

[16] [16] Zhao W F, Cook J, Parodos T, et al. Microstructural characterization of CdTe surface passivation layers[J]. Journal of Electronic Materials, 2010, 39(7): 924-929.

[17] [17] Liu Enke, Zhu Bingsheng, Luo Jinsheng. The Physics of Semiconductors[M]. Beijing: Publishing House of Electronics Industry, 2011. (in Chinese)

[18] [18] Zhang Xinchang, Wang Rongxing. A study of interface electrical characteristics for passivation films on Hg1-xCdxTe[J]. Optics and Precision Engineering, 1996, 4(5): 55-60. (in Chinese)

[19] [19] Srivastav V, Pal R, Venkataraman V. Performance study of high operating temperature HgCdTe mid wave infrared detector through numerical modeling[J]. Journal of Applied Physics, 2010, 108: 073112.

[20] [20] Gravrand O, Mollard L, Largeron C, et al. Study of LWIR and VLWIR focal plane array developments: comparison between p-on-n and different n-on-p technologies on LPE HgCdTe [J]. Journal of Electronic Materials, 2009, 38(8): 1733-1740.

[21] [21] Angelo S G, James B, Amanda G. Current voltage modeling of current limiting mechanisms in HgCdTe focal plane array photodetectors[J]. Journal of Electronic Materials, 2005, 34(6): 913-921.