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Chinese Optics Letters, Volume. 6, Issue 10, 724(2008)

Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 \mm

D. Bimberg*, C. Meuer, M. Lammlin, S. Liebich, J. Kim, A. Kovsh, I. Krestnikov, and G. Eisenstein
Author Affiliations
  • Institut für Festkorperphysik, Technische Universitat Berlin, EW 5-2, Hardenbergstr. 36, 10623 Berlin, Germany2 Innolume GmbH, Konrad-Adenauer-Allee 11, 40263 Dortmund, Germany3 Electrical Engineering Department, Technion, Haifa 32000, Israel
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    References(12)

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    [4] [4] S. Dommers, V. V. Temnov, U. Woggon, J. Gomis, J. Martinez-Pastor, M. Laemmlin, and D. Bimberg, Appl. Phys. Lett. 90, 033508 (2007).

    [5] [5] T. Akiyama, M. Ekawa, M. Sugawara, K. Kawaguchi, H. Sudo, A. Kuramata, H. Ebe, and Y. Arakawa, IEEE Photon. Technol. Lett. 17, 1614 (2005).

    [6] [6] A. R. Kovsh, N. A. Maleev, A. E. Zhukov, S. S. Mikhrin, A. P. Vasil’ev, E. A. Semenova, Yu. M. Shernyakov, M. V. Maximov, D. A. Livshits, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, and Zh. I. Alferov, J. Cryst. Growth 251, 729 (2003).

    [7] [7] P. Borri, W. Langbein, J. M. Hvam, F. Heinrichsdorff, H.-M. Mao, and D. Bimberg, IEEE J. Sel. Top. Quantum Electron. 6, 544 (2000).

    [8] [8] T. Vallaitis, C. Koos, R. Bonk, W. Freude, M. Laemmlin, C. Meuer, D. Bimberg, and J. Leuthold, Opt. Express 16, 170 (2008).

    [9] [9] D. Ouyang, N. N. Ledentsov, D. Bimberg, A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, and V. M. Ustinov, Semicond. Sci. Technol. 18, L53 (2003).

    [10] [10] R. Alizon, A. Bilenca, H. Dery, V. Mikhelashvili, G. Eisenstein, R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, Appl. Phys. Lett. 82, 4660 (2003).

    [11] [11] A. V. Uskov, E. P. O’Reilly, R. J. Manning, R. P. Webb, D. Cotter, M. Laemmlin, N. N. Ledentsov, and D. Bimberg, IEEE Photon. Technol. Lett. 16, 1265 (2004).

    [12] [12] A. P. Bogatov, P. G. Eliseev, and B. N. Sverdlov, IEEE J. Quantum Electron. 11, 510 (1975).

    CLP Journals

    [1] Yao Jianming, Kong Lingmin, Tu Hua, Wu Zhengyun. Photoluminescence Characteristics of Self-Assembled InAs Quantum Dots Capped with Different Strain Reducing Layer[J]. Acta Optica Sinica, 2009, 29(s1): 156

    Cited By

    [1] Christian Meuer, Carsten Schmidt-Langhorst, Holger Schmeckebier, Gerrit Fiol, Dejan Arsenijevi?, Colja Schubert, Dieter Bimberg. 40 Gb/s wavelength conversion via four-wave mixing in a quantum-dot semiconductor optical amplifier. Optics Express, 19, 3788(2011).

    [2] M. Kirak, Y. Altinok, S. Yilmaz. The effects of the hydrostatic pressure and temperature on binding energy and optical properties of a donor impurity in a spherical quantum dot under external electric field. Journal of Luminescence, 136, 415(2013).

    [3] Christian Meuer, Holger Schmeckebier, Gerrit Fiol, Dejan Arsenijevic, Jungho Kim, Gadi Eisenstein, Dieter Bimberg. Cross-Gain Modulation and Four-Wave Mixing for Wavelength Conversion in Undoped and p-Doped 1.3- $\mu\hbox{m}$ Quantum Dot Semiconductor Optical Amplifiers. IEEE Photonics Journal, 2, 141(2010).

    [4] Jefferson Flórez, ángela Camacho. Excitonic effects on the second-order nonlinear optical properties of semi-spherical quantum dots. Nanoscale Research Letters, 6, 268(2011).

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    D. Bimberg, C. Meuer, M. Lammlin, S. Liebich, J. Kim, A. Kovsh, I. Krestnikov, G. Eisenstein. Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 \mm[J]. Chinese Optics Letters, 2008, 6(10): 724

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    Paper Information

    Received: May. 16, 2008

    Accepted: --

    Published Online: Dec. 4, 2008

    The Author Email: D. Bimberg (Bimberg@physik.tu-berlin.de)

    DOI:10.3788/COL20080610.0724

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology