Optics and Precision Engineering, Volume. 12, Issue 5, 454(2004)

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    References(12)

    [1] [1] WILK G D,WALLACE R M. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon[J].Appl. Phys. Lett. ,1999,74(16):2854-2856.

    [2] [2] LEE B H,KANG L,NIEH R,et al . Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing[J].Appl. Phys. Lett. ,2000,76(11):1926-1928.

    [3] [3] KUKLI K,IHANUS J,RITALER M,et al . Tailoring the dielectric properties of HfO 2-Ta 2O 5 nanolaminates[J].Appl. Phys. Lett ., 1996,68(21):3737-3739.

    [4] [4] PLATT C L,DIENY B,BERKOWITZ A E. Spin-dependent tunneling in HfO 2 tunnel junctions[J].Appl. Phys. Lett.,1996,69(13):2291-2293.

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    Received: Jul. 12, 2004

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    Published Online: Jan. 18, 2008

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