Microelectronics, Volume. 52, Issue 6, 1039(2022)

Experimental Research on Transient Dose Rate Effect of DC/DC Converter Based on BiCMOS Controller with Feature of 0.35 μm

CHENG Ming, ZOU Huachang, ZHANG Chunya, and LUO Ding
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    References(3)

    [6] [6] NIKIFOROV A Y, SKOROBOGATOV P K. Dose rate laser simulation tests adequacy: shadowing and high intensity effects analysis [J]. IEEE Trans Nucl Sci, 1996, 43(6): 3115-3121.

    [7] [7] KING E E, AHLPORT B, TETTEMER G, et al. Transient radiation screening of silicon device using backside laser irradiation [J]. IEEE Trans Nucl Sci, 1982, NS-29(6): 1809-1815.

    [8] [8] DEVAL Y, LAPUYADE H. Evaluation of a design methodology dedicated to dose-rate-hardened linear intergrated circuits [J]. IEEE Trans Nucl Sci, 2002, 49: 1468-1473.

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    CHENG Ming, ZOU Huachang, ZHANG Chunya, LUO Ding. Experimental Research on Transient Dose Rate Effect of DC/DC Converter Based on BiCMOS Controller with Feature of 0.35 μm[J]. Microelectronics, 2022, 52(6): 1039

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    Paper Information

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    Received: Nov. 3, 2021

    Accepted: --

    Published Online: Mar. 11, 2023

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.210422

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