[1] [1] Brown J D, Boney J, Matthews J,et al. UV-specific (320～365nm) digital camera based on a 128 × 128 focal plane array of GaN/AlGaN p-i-n photodiodes [J] . MRS Internet J Nitride Semicond, 2000, 5(6):1-8.

[2] [2] Jean-Yves Duboz. GaN as seen by the industry[J]. Physica Status Solidi(a), 1999,176(1) :5-14.

[3] [3] Liu Q Z, Lau S S. A review of the metal-GaN contact technology[J]. Solid-State Electronics , 1998,V42(5) :677-691.

[4] [4] Jong Kyu Kim,Ho Wong Jang,Changmin Jeon,et al. Reduction of ohmic contace resistivity on p-type GaN by surface treatment current [J]. Applied Physics,2000, 1. 385-388.

[5] [5] Ho Wong Jang,Jong Kyu Kim,Chang Min Jeon,et al. Room temperature ohmic contact on n-type GaN using plasma treatment[J]. MRS Internert J Nitride Semicond,2001,6(8): 1-4.

[6] [6] Ho Won Jang, Ki Hong Kim, Jong Kyu Kim. Low-resistance and thermally stable Ohmic contact on p-type GaN using Pd'Ni metallization[J]. Applied Physics Letters, 2001,79 (12): 1822-1824.

[7] [7] M Bermudz V , Tung T M , Doverspike K,et al. The growth and properties of Al and AIN films on GaN(0001)[J]. J Applied Physics, 1996,79(1): 110-114.

[8] [8] Binari S C , Dietrich H B, Kelner G,et al. Electrical characterisation of Ti Schottky barriers on n-type GaN [J]. Electron Lett, 1994,30(11):909-911.

[9] [9] Sze S M , Coleman D J, Loya A, et al. Current transport in metal-semiconductor-metal structures[J]. Solid-State Electron,1971,14:1209-1218.

[10] [10] Koide Y, Ishikawa H , Kobayashi S ,et al. Dependence of electrical properties on work functions of metals contacting to ptype GaN[J]. Appl Surf Sci ,1997,117/118:373-379.

[11] [11] Tan L S , Prakash S, Ng K M, et al. Formation of Ti/Al ohmic contacts on Si-doped GaN epilayer by low temperatue annealing[J]. Semicond Sci Technol , 2000,15 (6): 585-588.