Effect of Multiplication Layer Thickness on Device Properties of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP Avalanche Photodiode

Hang Wang; Zhengbing Yuan; Ming Tan; Yuqiang Gu; Yuanyuan Wu; Qingquan Xiao; Shulong Lu

doi:10.3788/AOS202040.1804001

Acta Optica Sinica, Volume. 40, Issue 18, 1804001(2020)

Effect of Multiplication Layer Thickness on Device Properties of In_0.53Ga_0.47As/InP Avalanche Photodiode

Hang Wang^1,2, Zhengbing Yuan³, Ming Tan², Yuqiang Gu², Yuanyuan Wu², Qingquan Xiao³, and Shulong Lu^2、*

Author Affiliations

¹Institute of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui 230026, China

²Key Laboratory of Nano-devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China

³College of Big Data and Information Engineering, Guizhou University, Guiyang, Guizhou 550025, China

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Hang Wang, Zhengbing Yuan, Ming Tan, Yuqiang Gu, Yuanyuan Wu, Qingquan Xiao, Shulong Lu. Effect of Multiplication Layer Thickness on Device Properties of In_0.53Ga_0.47As/InP Avalanche Photodiode[J]. Acta Optica Sinica, 2020, 40(18): 1804001

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Paper Information

Category: Detectors

Received: May. 25, 2020

Accepted: Jun. 11, 2020

Published Online: Aug. 31, 2020

The Author Email: Lu Shulong (sllu2008@sinano.ac.cn)

DOI:10.3788/AOS202040.1804001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology