Semiconductor Optoelectronics, Volume. 43, Issue 5, 914(2022)

Wide Optical Bandwidth InGaAlAs/InP Quantum-Well Structure Covering S+C Band

ZHOU Shuai... FENG Chen, LIAO Miaomiao, LUO Jing, PENG Fangcao, HE Yong, DUAN Lihua and ZHANG Jing |Show fewer author(s)
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    References(9)

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    [4] [4] Shin D K, Henson B M, Khakimov R I, et al. Widely tunable, narrow linewidth external-cavity gain chip laser for spectroscopy between 1.0~1.1μm[J]. Opt. Express, 2016, 24(24): 27403-27414.

    [5] [5] Lin C F, Su Y S, Wu C H, et al. Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells[J]. IEEE Photon. Technol. Lett., 2004, 16(6): 1441-1443.

    [6] [6] Carrère, Truong V G, Marie X, et al. Large optical bandwidth and polarization insensitive semiconductor optical amplifiers using strained InGaAsP quantum wells[J]. Appl. Phys. Lett., 2010, 97(12): 121101.

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    ZHOU Shuai, FENG Chen, LIAO Miaomiao, LUO Jing, PENG Fangcao, HE Yong, DUAN Lihua, ZHANG Jing. Wide Optical Bandwidth InGaAlAs/InP Quantum-Well Structure Covering S+C Band[J]. Semiconductor Optoelectronics, 2022, 43(5): 914

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    Paper Information

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    Received: Aug. 19, 2022

    Accepted: --

    Published Online: Jan. 27, 2023

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2022081901

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