[2] [2] Zhang S L, Zhang X Y, Qi L， et al. The study of melting stage of bulk silicon using molecular dynamics simulation［J］.Physica B,2011,406(13): 2637-2641.

[3] [3] Sang Van L. Affect of the graphene layers on the melting temperature of silicon by molecular dynamics simulations［J］.Computational Materials Science,2016,111: 252-256.

[4] [4] Chang Z Y, Xiao Z G, Lin M H, et al. A molecular dynamics study of growth of silicon from melt under stress［J］.Physica B: Condensed Matter,2019,563: 79-84.

[6] [6] Pohl J, Mueller M, Seidl A, et al. Formation of parallel (111) twin boundaries in silicon growth from the melt explained by molecular dynamics simulations［J］.Journal of Crystal Growth,2010,312(8): 1411-1415.

[7] [7] Zirkelbacha F, Lindnera J K N, Nordlund K, et al. Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon［J］.Materials Science and Engineering: B,2009,159-160: 149-152.

[8] [8] Ganster P, Guy Tréglia, Frédéric Lancon, et al. Molecular dynamics simulation of silicon oxidization［J］.Thin Solid Films,2010,518(9): 2422-2426.

[9] [9] Buta D， Asta M, Hoyt J J. Atomistic simulation study of the structure and dynamics of a faceted crystal-melt interface［J］.Physical Review E,2008,78(3): 031605.

[10] [10] Chang J J, Hsieh T E, Wang Y L, et al. Modified polycrystalline silicon chemical-vapor deposition process for improving roughness at oxide/polycrystalline silicon interface［J］.Thin Solid Films，472(1-2): 164-168.

[11] [11] Raineri V, Iacona F, Lavia F, et al. Surface and interface roughness after thermal oxidation of As, B and Si implanted silicon wafers［C］. Ion Implantation Technology-96. IEEE, 1997.

[12] [12] Zhou N, Wu X, Wei X, et al. A molecular dynamics study of nucleation of dislocation in growth of silicon from melt［J］.Journal of Crystal Growth,2016,443: 15-19.

[16] [16] Zhou N, Liu B, Zhang C, et al. Molecular dynamics study of anisotropic growth of silicon［J］.Chinese Physics B,2016,25(7): 078109.