[1] [1] Anikin M,Andreev A N,Pyatko S N,et al.UV photodetectors in 6H-SiC [J].Sensors & Actuators A-Physical,1992,33(1-2):91-93.

[2] [2] Yan F,Qin C,Zhao J,et al.Low-noise visible-blind UV avalanche photodiodes with edge terminated by 2 degree positive bevel [J].Electronics Letters,2002,38(7):335-336.

[3] [3] Edmond J A,Kong Huashuang,Carter C H J.Blue LEDs,UV photodiodes and high-temperature rectifiers in 6H-SiC [J].Physica B:Condensed Matter,1993,185(1-4):453-460.

[4] [4] Luo Y F,Zhao Y,Olsen J H.4H-SiC visible blind UV avalanche photodiode [J].Electronics Lett.,1999,35(11):929-930.

[5] [5] Zhang Y G,Li A Z,Milnes A G.Metal-semiconductor-metal ultraviolet photodetectors using 6H-SiC [J].IEEE Photonics Technology Lett.,1997,9(3):363-364.

[6] [6] Frojdh C,Thungstrom G,Nilsson H E,et al.UV-sensitive photodetectors based on metal-semiconductor contacts on 6H-SiC [J].Physica Scripta,169-171.

[7] [7] Torvik J T,Pankove J I,Van Zeghbroeck B J.Comparison of GaN and 6H-SiC p-i-n photodetectors with excellent ultraviolet sensitivity and selectivity [J].IEEE Transactions on Electron Devices,1999,46(7):1326-1331.

[8] [8] Wu Z Y,Yan F,Xin X B,et al.Demonstration of the first metal-semiconductor-metal ultraviolet photodetectors on 4H-SiC [J].Material Science Forum,Accepted .