Metal-semiconductor-metal (MSM) structure photodetectors have many advantages, including easy fabrication, simple wafer structure with only one mono-dopant active layer, and excellent potential to achieve high quantum efficiency and high speed. In this paper, we demonstrated fabrication of 4H-SiC UV photodetector with MSM structure by using nickel as Schottky contact. The result shows that detector has very low dark current;at the bias about 15 V, the density of dark current is about 70 nA/cm2. The illuminated current of the detector is about two orders magnitude higher than the dark current. The ratio of the responsivity about 290 nm to that at 380 nm is greater than 1000, implying that those devices have a great improved visible blind performance.