Influence of the quantum-confined Stark effect on the temperature-induced photoluminescence blueshift of InGaN/GaN quantum wells in laser diode structures

Wenyu Cao; Xiaodong Hu

doi:10.3788/COL201614.061402

Chinese Optics Letters, Volume. 14, Issue 6, 061402(2016)

Influence of the quantum-confined Stark effect on the temperature-induced photoluminescence blueshift of InGaN/GaN quantum wells in laser diode structures

Wenyu Cao and Xiaodong Hu^*

Author Affiliations

State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China

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Wenyu Cao, Xiaodong Hu. Influence of the quantum-confined Stark effect on the temperature-induced photoluminescence blueshift of InGaN/GaN quantum wells in laser diode structures[J]. Chinese Optics Letters, 2016, 14(6): 061402

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Paper Information

Category: Lasers and Laser Optics

Received: Dec. 18, 2015

Accepted: Mar. 11, 2016

Published Online: Aug. 3, 2018

The Author Email: Xiaodong Hu (huxd@pku.edu.cn)

DOI:10.3788/COL201614.061402

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology