Acta Photonica Sinica, Volume. 53, Issue 11, 1131001(2024)
Research Progress of Thin Film Devices in the Far Ultraviolet (Invited)
Fig. 1. Refractive index n and band gap of ultraviolet thin film materials
Fig. 3. Refractive index n and extinction coefficient k of MgF2 obtained by ZUKIC M et al. using a least-squares method
Fig. 4. Refractive index n and extinction coefficient k of MgF2 obtained by Tongji University
Fig. 5. Refractive index n and extinction coefficient k of MgF2 obtained by MARCOS D R et al. using Kramers-Kronig
Fig. 7. Reflectivity of Al+eMgF2 mirrors fabricated at varying substrate temperatures
Fig. 8. Reflectivity of Al+LiF+eMgF2 mirrors stored in 20%,40% and 80% RH
Fig. 10. Transmittance of narrowband (Al/MgF2)^3 filters prepared by LARRUQUERT J I et al.
Fig. 12. Reflectivity of narrowband LaF3/MgF2 multilayers fabricated by ZUKIC M et al
Fig. 13. Reflectivity of narrowband LaF3/MgF2 multilayer designed by WANG Xiaodong et al
Fig. 14. Reflectivity of narrowband LaF3/MgF2 multilayer fabricated by LÓPEZ-REYES P et al
Fig. 15. Reflectivity of narrowband LaF3/MgF2 multilayers fabricated by Tongji
Fig. 16. Reflectivity of Al+LiF+SiC+LiF fabricated by LARRUQUERT J I et al
Fig. 17. Reflectivity of Al+LiF+B4C fabricated by Tongji University
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Jinlong ZHANG, Shuangying LI, Qize WU, Hongfei JIAO, Xinbin CHEN, Zhanshan WANG. Research Progress of Thin Film Devices in the Far Ultraviolet (Invited)[J]. Acta Photonica Sinica, 2024, 53(11): 1131001
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Received: Apr. 28, 2024
Accepted: Jul. 2, 2024
Published Online: Jan. 8, 2025
The Author Email: ZHANG Jinlong (jinlong@tongji.edu.cn)