Research progress of high power semiconductor laser pump source

year	wavelength/nm	output power/W	key parameters	conversion efficiency/%	research group	reference
2014	88x	18.8	95 μm，3.8 mm	58	USA，nLight	[9]
2015	808	10	190 μm，4 mm	−	Japan，Optoenergy	[10]
2016	808	22	200 μm	54	JENOPTIK	[11]
2016	808	9	140 μm，2 mm	63%	Coherent	[12]
2019	808	14	200 μm，4 mm	64	Ferdinand-Braun-Institut	[13]
2019	808	2.8	100 μm，2 mm	−	Wang Yue	[14]
2020	880	19	200 μm，4 mm	−	Institute of Semiconductors of CAS	−

Table 2.
Output power of 8xx nm laser bar
8xx nm激光器巴条输出功率

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Table 2.
Output power of 8xx nm laser bar
8xx nm激光器巴条输出功率

year	wavelength/nm	output power	key parameters	fill factor/%	research group	reference
2012	88x	QCW：560 W	bar width：3 mm; cavity length：3 mm	80	USA，nLight	[19]
2013	808	CW：150 W	bar width：1 cm; cavity length：1.5 mm	50	USA，nLight	[20]
2014	88x	QCW：630 W	bar width：3 mm; cavity length：3 mm	80	USA，nLight	[9]
2016	808	QCW：200 W	bar width：5 mm; cavity length：1.5 mm	−	Russia	[21]
2016	880	QCW：250 W	bar width：0.5 cm	80	USA，nLight	[22]
2017	80x	QCW：210 W	bar width：5 mm; cavity length：1 mm	72	M.A. Ladugin	[23]
2017	880	1.8 kW（200 μs，14 Hz）	bar width：1 cm; cavity length：3 mm	80	USA，nLight	[24]
2017	808	QCW：613 W	cavity length：2 mm	85	Xi’an Institute of Optics and Precision Mechanics of CAS	[25]
2018	808	QCW：500 W	cavity length：1.5 mm	80	OSRAM	[26]
2020	8xx	CW：200 W	cm-bar	−	Institute of Semiconductors of CAS	−

Table 3.
Output power of 9xx nm single-emitter semiconductor lasers
9xx nm半导体激光器单管输出功率

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Table 3.
Output power of 9xx nm single-emitter semiconductor lasers
9xx nm半导体激光器单管输出功率

year	wavelength/nm	output power/W	key parameters	conversion efficiency/%	research group	reference
2009	980	20	96 μm，4 mm	−	Ferdinand-Braun-Institut	[32]
2013	975	15	100 μm，4 mm	74	Ferdinand-Braun-Institut	[33]
2013	915	13.5	85 μm，4 mm	−	S.McDougall	[34]
2015	9xx	29.5	100 μm，5.7 mm	−	USA，JDSU	[35]
2015	915	18	150 μm，5 mm	58	USA，nLight	[36]
2015	915	24	100 μm，4 mm	60	Japan，Optoenergy	[37]
2016	915	12.4	95 μm，4.8 mm	60	Research Institute of Tsinghua University in Shenzhen	[38]
2017	915	33	220 μm，4 mm	60	Japan，Fujikura	[39]
2018	940	14	100 μm，4 mm	63	Ferdinand-Braun-Institut	[40]
2019	975	20	200 μm，4 mm	66.7	Japan，Fujikura	[41]
2019	9xx	14.4	200 μm，2 mm	71.8	Institute of Semiconductors of CAS	[42]
2020	975	21	100 μm，4 mm	−	Institute of Semiconductors of CAS	[43]

Table 4.
Output power of 9xx nm laser bar
9xx nm激光器巴条输出功率

View table

View in Article

Table 4.
Output power of 9xx nm laser bar
9xx nm激光器巴条输出功率

year	wavelength/nm	output power	key parameters	fill factor/（%）	research group	reference
2013	9xx	QCW：1.7 kW	bar width：1 cm; cavity length：6 mm	72	Ferdinand-Braun-Institut	[45]
2014	940	CW：200 W	cavity length：4 mm	50	Jenoptik	[46]
2015	940	QCW：1.98 kW	bar width：1 cm; cavity length：4 mm	69	Ferdinand-Braun-Institut	[47]
2015	9xx	＞300 W	−	60	USA，Trumpf Photonics	[48]
2016	940	QCW：1 kW	bar width：1 cm; cavity length：4 mm	69	Ferdinand-Braun-Institut	[49]
2017	940	QCW：600 W	bar width：1 cm; cavity length：4 mm	70	M. M. Karow	[50]
2018	938	CW：476 W	−	60	USA，Trumpf Photonics	[51]
2019	9xx	450 W	bar width：1 cm; cavity length：4.2 mm	73	II-VI Laser Enterprise	[52]
2019	9xx	1 kW（0.2 ms，10 Hz）	−	87	Ferdinand-Braun-Institut	[53]
2019	960	665.6 W（500 μs）	bar width：1 cm; cavity length：2 mm	63.8	Xi’an Institute of Optics and Precision Mechanics of CAS	[54]
2020	9xx	CW：300 W, QCW：996 W	cm-bar	70	Institute of Semiconductors of CAS

Table 5.
Research progress of 9xx nm high-power narrow-linewidth semiconductor laser
9xx nm高功率窄谱宽半导体激光器研究进展

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Table 5.
Research progress of 9xx nm high-power narrow-linewidth semiconductor laser
9xx nm高功率窄谱宽半导体激光器研究进展

year	wavelength/nm	output power/W	device type	spectral linewidth/nm	research group	reference
2010	975	10	DFB，second order grating	＜1	Ferdinand-Braun-Institut	[57]
2010	980	14	DBR，sixth order grating	＜1	Ferdinand-Braun-Institut	[58]
2012	976	11	DFB，eightieth-order grating	＜1	Ferdinand-Braun-Institut	[59]
2014	970	6	DFB，eightieth-order grating	＜0.7	Jonathan Decker	[60]
2017	975	5.5	DFB，second order grating	＜1	Mostallino	[61]
2019	980	10.7	DBR，sixth order grating	2.77	Qiao Chuang	[62]

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Xiaoyu Ma, Naling Zhang, Li Zhong, Suping Liu, Hongqi Jing. Research progress of high power semiconductor laser pump source[J]. High Power Laser and Particle Beams, 2020, 32(12): 121010

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Paper Information

Category:

Received: Aug. 10, 2020

Accepted: --

Published Online: Jan. 6, 2021

The Author Email: Zhang Naling (zhangnaling@semi.ac.cn), Zhong Li (zhongli@semi.ac.cn)

DOI:10.11884/HPLPB202032.200236

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Output power of 8xx nm single-emitter lasers8xx nm半导体激光器单管输出功率

Table 1. Output power of 8xx nm single-emitter lasers8xx nm半导体激光器单管输出功率

Table 2. Output power of 8xx nm laser bar8xx nm激光器巴条输出功率

Table 2. Output power of 8xx nm laser bar8xx nm激光器巴条输出功率

Table 3. Output power of 9xx nm single-emitter semiconductor lasers9xx nm半导体激光器单管输出功率

Table 3. Output power of 9xx nm single-emitter semiconductor lasers9xx nm半导体激光器单管输出功率

Table 4. Output power of 9xx nm laser bar9xx nm激光器巴条输出功率

Table 4. Output power of 9xx nm laser bar9xx nm激光器巴条输出功率

Table 5. Research progress of 9xx nm high-power narrow-linewidth semiconductor laser9xx nm高功率窄谱宽半导体激光器研究进展

Table 5. Research progress of 9xx nm high-power narrow-linewidth semiconductor laser9xx nm高功率窄谱宽半导体激光器研究进展

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Table 1.
Output power of 8xx nm single-emitter lasers
8xx nm半导体激光器单管输出功率

Table 1.
Output power of 8xx nm single-emitter lasers
8xx nm半导体激光器单管输出功率

Table 2.
Output power of 8xx nm laser bar
8xx nm激光器巴条输出功率

Table 2.
Output power of 8xx nm laser bar
8xx nm激光器巴条输出功率

Table 3.
Output power of 9xx nm single-emitter semiconductor lasers
9xx nm半导体激光器单管输出功率

Table 3.
Output power of 9xx nm single-emitter semiconductor lasers
9xx nm半导体激光器单管输出功率

Table 4.
Output power of 9xx nm laser bar
9xx nm激光器巴条输出功率

Table 4.
Output power of 9xx nm laser bar
9xx nm激光器巴条输出功率

Table 5.
Research progress of 9xx nm high-power narrow-linewidth semiconductor laser
9xx nm高功率窄谱宽半导体激光器研究进展

Table 5.
Research progress of 9xx nm high-power narrow-linewidth semiconductor laser
9xx nm高功率窄谱宽半导体激光器研究进展