[1] [1] PALUBIAK D P, DEEN M J. CMOS SPADs: design issues and research challenges for detectors, circuits, and arrays［J］.IEEE Journal of Selected Topics in Quantum Electronics, 2014,20(6): 409-426.

[2] [2] VIGNETTI M M, CALMON F, LESIEUR P, DUBOIS F, et al. A novel 3D pixel concept for Geiger-mode detection in SOI technology［C］.2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS),2016: 166-169.

[3] [3] BRONZI D. Automotive three-dimensional vision through a single-photon counting SPAD camera［J］.IEEE Transactions on Intelligent Transportation Systems, 2016,17(3): 782-795.

[4] [4] LEITNER T . Measurements, simulations of low dark count rate single photon avalanche diode device in a low voltage 180-nm CMOS image sensor technology［J］.IEEE Transactions on Electron Devices, 2013,60(6):1982-1988.

[5] [5] BOSE S, OUH H. Parametric study of p-n junctions and structures for CMOS-integrated single-photon avalanche diodes［J］. IEEE Sensors Journal, 2018,18(13):5291-5299.

[6] [6] FINKELSTEIN H, HSU M J, ESENER S C.STI-bounded single-photon avalanche diode in a deep-submicrometer CMOS technology［J］. IEEE Electron Device Letters, 2006,27(11): 887-889.

[7] [7] GERSBACH M, NICLASS C, CHARBON E, et al. A single photon detector implemented in a 130nm CMOS imaging process［C］. ESSDERC 2008-38th European Solid-State Device Research Conference, 2008: 270-273.

[8] [8] RICHARDSON J A, GRANT L A , HENDERSON R K. Low dark count single-photon avalanche diode structure compatible with standard nanometer scale CMOS technology［J］. IEEE Photonics Technology Letters, 2009,21(14): 1020-1022.

[9] [9] RICHARDSON J A, GRANT L A, WEBSTER E A G, et al . A 2μm diameter, 9Hz dark count, single photon avalanche diode in 130nm CMOS technology［C］.2010 Proceedings of the European Solid State Device Research Conference,2010: 257-260.

[10] [10] WEBSTER E A G, RICHARDSON J A, GRANT L A, et al . A single-photon avalanche diode in 90-nm CMOS imaging technology with 44% photon detection efficiency at 690 nm［J］. IEEE Electron Device Letters, 2012,33(5):694-696.

[11] [11] HENDERSON R K, WEBSTER E A G, GRANT L A. A dual-junction single-photon avalanche diode in 130-nm CMOS technology［J］.IEEE Electron Device Letters, 2013, 34(3): 429-431.

[12] [12] VEERAPPAN C , CHARBON E. A substrate isolated CMOS SPAD enabling wide spectral response and low electrical crosstalk［J］.IEEE Journal of Selected Topics in Quantum Electronics,2014,20(6): 299-305.

[13] [13] VEERAPPAN C, CHARBON E. A low dark count p-i-n diode based SPAD in CMOS technology［J］. IEEE Transactions on Electron Devices,2016,63(1): 65-71.

[14] [14] WEBSTER E A G, GRANT L A, HENDERSON R K. A high-performance single-photon avalanche diode in 130-nm CMOS imaging technology［J］.IEEE Electron Device Letters, 2012, 33(11):1589-1591.

[15] [15] LEE M J, XIMENES A R. High-performance back-illuminated three-dimensional stacked single-photon avalanche diode implemented in 45-nm CMOS technology［J］. IEEE Journal of Selected Topics in Quantum Electronics,2018,24(6): 1-9.

[16] [16] FREY L, MARTY M. Enhancing near-infrared photodetection efficiency in SPAD with silicon surface nanostructuration［J］. IEEE Journal of the Electron Devices Society, 2018,6:392-395.

[18] [18] WU Jia-jun, XIE Sheng, MAO Lu-hong, et al. Single photon avalanche diode with non-contact guard ring based on CMOS technology［J］.Acta Photonica Sinica, 2018, 47(1): 0125001

[19] [19] WANG Wei, BAO Xiao-yuan, CHEN Li,et al. A CMOS single photon avalanche diode device with high photon detection efficiency［J］. Acta Photonica Sinica,2016,45(8):0823001

[20] [20] WANG-Wei, CHEN Ting, LI Jun-feng, et al. The research of high photon detection efficiency CMOS single photon avalanche diode［J］. Acta Photonica Sinica,2016,46(8): 0823001.

[22] [22] NICLASS C, SOGA M. A miniature actively recharged single-photon detector free of afterpulsing effects with 6ns dead time in a 0.18μm CMOS technology［C］. Proceedings of Electron Devices Meeting, 2010: 14.3-14.3.4.

[23] [23] GUERRIERI F, TISA S, TOSI A,et al. Two-dimensional SPAD imaging camera for photon counting［J］. IEEE Photonics Journal, 2010,2(5): 759-774.

[24] [24] STOPPA D, MOSCONI D, PANCHERI L, et al.Single-photon avalanche diode CMOS sensor for time-resolved fluorescence measurements［J］. IEEE Sensors Journal,2009,9(9):1084-1090.