Photonics Research, Volume. 11, Issue 8, 1465(2023)
High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications Editors' Pick
[11] S. Manda, R. Matsumoto, S. Saito, S. Maruyama, H. Minari, T. Hirano, T. Takachi, N. Fujii, Y. Yamamoto, Y. Zaizen, T. Hirano, H. Iwamoto. High-definition visible-SWIR InGaAs image sensor using Cu-Cu bonding of III-V to silicon wafer. IEEE International Electron Device Meeting, 390-393(2020).
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DaeHwan Ahn, Sunghan Jeon, Hoyoung Suh, Seungwan Woo, Rafael Jumar Chu, Daehwan Jung, Won Jun Choi, Donghee Park, Jin-Dong Song, Woo-Young Choi, Jae-Hoon Han. High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications[J]. Photonics Research, 2023, 11(8): 1465
Category: Optoelectronics
Received: Mar. 23, 2023
Accepted: Jun. 19, 2023
Published Online: Aug. 2, 2023
The Author Email: Jae-Hoon Han (hanjh@kist.re.kr)