Journal of Radiation Research and Radiation Processing, Volume. 40, Issue 5, 050701(2022)

Research and design of high voltage radiation hardened lateral diffused metal oxide semiconductor

Fei CHU1...2,*, Hongzhuan CHEN1, Ling PENG2, Ying WANG2 and Jingyi NING2 |Show fewer author(s)
Author Affiliations
  • 1Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
  • 2Beijing Microelectronics Technology Institute, Beijing 100076, China
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    Figures & Tables(14)
    The schematic diagram of SEB and SEGR in LDMOS
    Structure of radiation hardened LDMOS
    Transfer characteristic and breakdown characteristic of LDMOS
    Diagram of LDMOS SEE irradiation test
    Results of LDMOS SEE irradiation test
    Micrograph of non-hardened LDMOS SEB failure point
    Influence of Pwell doping concentration on LDMOS SEB voltage
    Influence of Pwell doping concentration on LDMOS breakdown characteristic
    LDMOS drain region electric field during SEE
    SEB simulation of non-hardened LDMOS
    SEB simulation of radiation hardened LDMOS
    Drain current changes of LDMOS during SEE simulation
    Gate oxide electric field changes of LDMOS during SEE simulation
    • Table 1. Radiation hardened measurements for LDMOS against single event effect (SEE)

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      Table 1. Radiation hardened measurements for LDMOS against single event effect (SEE)

      加固措施 Hardening measures加固机理 Hardening mechanism

      降低Pwell电阻;增加Pwell长度

      Decrease Pwell resistence; increase Pwell length

      降低寄生BJT电流增益

      Decrease parasitic BJT current gain

      降低Pwell少数载流子寿命;降低源区掺杂浓度

      Decrease minority carrier lifetime in Pwell region;

      decrease source doping Concentration

      降低寄生BJT发射极注入效率

      Decrease parasitic BJT emitter injection efficiency

      增加N漂移区长度

      Increase N drift region length

      提高雪崩击穿电压

      Increase avalanche break-down voltage

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    Fei CHU, Hongzhuan CHEN, Ling PENG, Ying WANG, Jingyi NING. Research and design of high voltage radiation hardened lateral diffused metal oxide semiconductor[J]. Journal of Radiation Research and Radiation Processing, 2022, 40(5): 050701

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    Paper Information

    Category: Research Articles

    Received: Mar. 23, 2022

    Accepted: May. 6, 2022

    Published Online: Nov. 3, 2022

    The Author Email: CHU Fei (sdcf_2000@163.com)

    DOI:10.11889/j.1000-3436.2022-0035

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