Journal of Radiation Research and Radiation Processing, Volume. 40, Issue 5, 050701(2022)
Research and design of high voltage radiation hardened lateral diffused metal oxide semiconductor
Fig. 3. Transfer characteristic and breakdown characteristic of LDMOS
Fig. 7. Influence of Pwell doping concentration on LDMOS SEB voltage
Fig. 8. Influence of Pwell doping concentration on LDMOS breakdown characteristic
Fig. 13. Gate oxide electric field changes of LDMOS during SEE simulation
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Fei CHU, Hongzhuan CHEN, Ling PENG, Ying WANG, Jingyi NING. Research and design of high voltage radiation hardened lateral diffused metal oxide semiconductor[J]. Journal of Radiation Research and Radiation Processing, 2022, 40(5): 050701
Category: Research Articles
Received: Mar. 23, 2022
Accepted: May. 6, 2022
Published Online: Nov. 3, 2022
The Author Email: CHU Fei (sdcf_2000@163.com)