Spectroscopy and Spectral Analysis, Volume. 34, Issue 1, 108(2014)
Low-Temperature-Dependent Characteristics of Raman Scattering in N-Type 4H-SiC
References(7)
[1] [1] Elasser A. Pchow T. Prec. IEEE, 2002, 90: 969.
[2] [2] Waldrop J R, Grant R W, Wang Y C. Journal of Applied Physics, 1992, 72: 4757.
[4] [4] Chen Fengping, Zhang Yuming, Zhang Yimen. Chin. Phys. B, 2012, 21(3): 037304.
[5] [5] Hyungtak K, Jpmgtae L, Ho-Young C. Journal of the Korean Physical Society, 2010, 56, 1523.
[6] [6] Ivanov P A, Potapov A S, Samsonova T P. Semiconductor, 2012, 46: 532.
[7] [7] Yang Yintang, Han Ru, Wang Ping. Chinese Physics B, 2008, 17(9): 3459-05.
[11] [11] Yan F W, Gao H Y, Zhang H X. Journal of Applied Physics, 2007, 101: 023506.
Tools
Get Citation
Copy Citation Text
MIAO Rui-xia, ZHAO Ping, LIU Wei-hong, TANG Xiao-yan. Low-Temperature-Dependent Characteristics of Raman Scattering in N-Type 4H-SiC[J]. Spectroscopy and Spectral Analysis, 2014, 34(1): 108
Paper Information
Received: Mar. 17, 2013
Accepted: --
Published Online: Jan. 27, 2015
The Author Email: Rui-xia MIAO (miao9508301@163.com)
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20