Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In<sub>0.82</sub>Ga<sub>0.18</sub>As buffer layer

Qiu-lin WEI; Zuo-xing GUO; Lei ZHAO; Liang ZHAO; De-zeng YUAN; Guo-qing MIAO; Mao-sheng XIA

doi:10.1007/s11801-016-6190-3

Optoelectronics Letters, Volume. 12, Issue 6, 441(2016)

Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In_0.82Ga_0.18As buffer layer

Qiu-lin WEI1... Zuo-xing GUO1, Lei ZHAO1, Liang ZHAO1, De-zeng YUAN1, Guo-qing MIAO2 and Mao-sheng XIA1,* |Show fewer author(s)

Author Affiliations

¹Key Laboratory of Automobile Materials of Ministry of Education of China, College of Materials Science and Engineering, Jilin University, Changchun 130025, China

²State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

show less

Figures & Tables(0)

Tools

Get Citation

Copy Citation Text

WEI Qiu-lin, GUO Zuo-xing, ZHAO Lei, ZHAO Liang, YUAN De-zeng, MIAO Guo-qing, XIA Mao-sheng. Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In_0.82Ga_0.18As buffer layer[J]. Optoelectronics Letters, 2016, 12(6): 441

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Received: Sep. 5, 2016

Accepted: --

Published Online: Oct. 12, 2017

The Author Email: Mao-sheng XIA (xiams@jlu.edu.cn)

DOI:10.1007/s11801-016-6190-3

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

微信扫一扫：分享