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Optoelectronics Letters, Volume. 9, Issue 5, 362(2013)

Enhanced emission of 2.9 μm from Ho3+/Pr3+co-doped LiYF4crystal excited by 640 nm

Jiang-tao PENG1, Hai-ping XIA1、*, Pei-yuan WANG1, Hao-yang HU1, Lei TANG1, Yue-pin ZHANG1, Hao-chuan JIANG2, and Bao-jiu CHEN3
Author Affiliations
  • 1Key laboratory of Photo-electronic Materials, Ningbo University, Ningbo 315211, China
  • 2Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315211, China
  • 3Department of Physics, Dalian Maritime University, Dalian 116026, China
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    PENG Jiang-tao, XIA Hai-ping, WANG Pei-yuan, HU Hao-yang, TANG Lei, ZHANG Yue-pin, JIANG Hao-chuan, CHEN Bao-jiu. Enhanced emission of 2.9 μm from Ho3+/Pr3+co-doped LiYF4crystal excited by 640 nm[J]. Optoelectronics Letters, 2013, 9(5): 362

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    Paper Information

    Received: Jun. 4, 2013

    Accepted: --

    Published Online: Oct. 12, 2017

    The Author Email: Hai-ping XIA (hpxcm@nbu.edu.cn)

    DOI:10.1007/s11801-013-3101-8

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology