Chinese Optics Letters, Volume. 11, Issue 11, 112501(2013)
Quadratic nonlinear response to 1.56-\mu m continuous wave laser in semi-insulating GaAs
The nonlinear photoresponse to a 1.56-\mu m infrared continuous wave laser in semi-insulating (SI) galliumarsenide (GaAs) is examined. The double-frequency absorption (DFA) is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage. The electric field-induced DFA remarkably affects the native DFA in SI GaAs. The surface electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the photocurrent and dark current.
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Xiuhuan Liu, Yi Li, Zhanguo Chen, Mingli Li, Gang Jia, Yanjun Gao, Lixin Hou, Shuang Feng, Xinlu Li, Qi Wang. Quadratic nonlinear response to 1.56-\mu m continuous wave laser in semi-insulating GaAs[J]. Chinese Optics Letters, 2013, 11(11): 112501
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Received: Jul. 8, 2013
Accepted: Sep. 23, 2013
Published Online: Oct. 24, 2013
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