Electron beam direct writing （EBDW） technology is an ideal tool for fabricating micro curved-surface electronics， which has high resolution and simple operation. The absorption energy deposition density distribution of resist directly affects the accuracy and resolution of the exposure pattern， but the existing plane process is no longer suitable for curved-surface direct writing because of its asymmetric distribution. In this paper， Monte Carlo simulation based on micro-cube element is used to calculate the absorption energy deposition density distribution under different direct writing parameters. The simulation results are shown that the ellipticity of the exposure dot increase with increasing incident energy or with the incident tilt angle increases. By reducing the beam spot size and thin layer， the resolution by direct writing on the curved can be improved. The experiment results are shown that aspect rations of the exposure dot are 1.458，2.323， 2.924， as well as 1.014，1.113，1.173 with incident energy （5 keV， 10 keV， and 15 keV） and incident angle （5°，10°， and 15°） parameters respectively. The increased incident energy on the ellipticity is even more obviously. The results of this study provide a theoretical basis for practical direct writing on curved-surface and are of relevance to the process.