Acta Physica Sinica, Volume. 69, Issue 14, 148501-1(2020)
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Fig. 1. Structure of the P+/P-well/deep N-well SPAD device with polysilicon field plate.
Fig. 6. DCR as a function of excess bias voltage at room temperature.
Fig. 7. DCR of SPAD_2 as a function of (a) temperature at different excess bias voltage, and (b) excess bias voltage at different temperature.
Fig. 8. TCAD simulation of 2D electric field: (a) SPAD_1; (b) SPAD_2.
Fig. 9. Calculated DCR as a function of excess bias voltage at room temperature.
Fig. 10. Variety of DCR under 0–10 V excess bias voltage at room temperature.
Table 1. Summary of the key parameters for model-ing (T = 300 K, VEX = 0.4 V).
View tableView in ArticleTable 1. Summary of the key parameters for model-ing (T = 300 K, VEX = 0.4 V).
参数 描述 值 Aa/μm2 雪崩区面积 63.6 Ar/μm2 保护环区域面积 49.4 Wa/μm 雪崩区厚度 0.8 Wr/μm 保护环区域厚度 0.8 Pa 雪崩区平均雪崩触发概率 0.09 $ m_{\rm n}^*/m_0 $ 电子有效质量 0.43 $ m_t^*/m_0 $ 电子隧穿有效质量 0.25 m0/10–31 kg 电子静止质量 9.108 ni/1010 cm–3 本征载流子浓度 1.5 k/10–23 J·K-1 玻尔兹曼常数 1.38 $\hbar $ 狄拉克常数 1.054 q/10–19 C 电子电荷量 1.602
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Dong Han, Fei-Yang Sun, Ji-Yuan Lu, Fu-Ming Song, Yue Xu.
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Received: Apr. 9, 2020
Accepted: --
Published Online: Dec. 28, 2020
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