Chinese Optics Letters, Volume. 23, Issue 1, 012602(2025)

Enhanced reflection laser protection thin films compatible with visible light stealth

Zexiang He1,2, Zexiong Hu1,2, Jian Yang1,2, Weijie Chen1,2, Zhenzhen Duan1,2, Ning Wang1,2, Dan Wang1,2, Xiaotan Ji1,2, Nan Chen1,2, Zhengqian Luo1,2, and Yikun Bu1,2、*
Author Affiliations
  • 1School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
  • 2Fujian Key Laboratory of Ultrafast Laser Technology and Applications, Xiamen University, Xiamen 361005, China
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    Figures & Tables(9)
    Structure and parameters of thin films. (a) Diagram of the thin-film structure; (b) optical constants of the materials; (c) melting points and deposition rates.
    Color distribution and electric field regulation. (a) The color of the thin films and reflectance at the central wavelength (λ0 = 1064 nm) vary by changing the optical thickness of dielectrics. (b)–(c) The electric field intensity distribution changes with the thickness of each dielectric in the same total optical thickness. (d) The maximum and Al layer surface electric field intensity of each film.
    Characterizations on color saturation control. (a)–(c) Saturation of structure γ (n = 1) varies by changing the thickness of the Nb layer; (d)–(f) saturation of structure γ (n = 2) varies by changing the thickness of the Nb layer.
    Preparation of different samples. (a) Samples on Al foil and BK7 substrates; (b) chromaticity coordinates of samples; (c) measurement and design spectra of S1; (d) measurement and design spectra of S3; electric field distributions of (e) S1 and (f) S3 at the wavelength of 1064 nm.
    Schematic diagram of a laser testing device.
    Laser irradiation test results. (a) Test curve of laser irradiation on single-layer Al; (b) test curve of laser irradiation on S1; (c) single-layer Al micrograph of the front after irradiation; (d) S1 micrograph of the front after irradiation; (e) single-layer Al micrograph of the back after irradiation; (f) S1 micrograph of the back after irradiation.
    Series of SEM images. (a) Surface morphology of S1 exhibiting crack damage; (b) surface morphology of S1 exhibiting an ablative hole. (c) Surface morphology of S1 exhibiting a trace of irradiation under an unbroken test. (d) Cross section of 100 nm single-layer Al; (e) cross section of S3; (f) cross section of S3 irradiated with the highest power density laser for 60 s.
    Verification and application of thin films with symmetrical structure. (a) Schematic diagram of symmetrical S1 structure on the base; (b) front side and back side spectra of symmetrical S1; (c) colors of front side and back side. (d) cross section of symmetrical S1; (e) collection of S1 microreflectors; (f) coating spraying effect.
    • Table 1. Parameters of Different Samples

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      Table 1. Parameters of Different Samples

       123456
      Al (nm)100100100100100100
      SiO2 (nm)91193222178243272
      Ta2O5 (nm)15280561178479
      SiO2 (nm)162244252
      Ta2O5 (nm)14394109
      Nb (nm)55561010
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    Zexiang He, Zexiong Hu, Jian Yang, Weijie Chen, Zhenzhen Duan, Ning Wang, Dan Wang, Xiaotan Ji, Nan Chen, Zhengqian Luo, Yikun Bu, "Enhanced reflection laser protection thin films compatible with visible light stealth," Chin. Opt. Lett. 23, 012602 (2025)

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    Paper Information

    Category:

    Received: May. 30, 2024

    Accepted: Jul. 29, 2024

    Posted: Jul. 29, 2024

    Published Online: Feb. 19, 2025

    The Author Email: Yikun Bu (buyikun0522@xmu.edu.cn)

    DOI:10.3788/COL202523.012602

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