Semiconductor Optoelectronics, Volume. 45, Issue 2, 200(2024)

Effect of Common Point Defects in Silicon Cells on Device Response Characteristics

YANG Yinghong1 and ZHANG Rongzhu2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    References(7)

    [2] [2] Tang M, Colombo L, Zhu J, et al. Intrinsic point defects in cry stalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination,and formation volumes[J]. Phys. Rev. B, 1997, 55(21):14279.

    [3] [3] Falster R, Voronkov V, Quast F. On the properties of the intrinsic point defects in silicon: A perspective from crystal growth and wafer processing[J]. Phys. Status Solidi B, 2000,222(1): 219-244.

    [4] [4] Pei M, Wang W, Pan B C, et al. Calculation of defects in silicon by a new tight-binding model[J]. Chin. Phys. Lett.,2000, 17(3): 215-217.

    [5] [5] Dannefaer S, Avalos V, Andersen O. Grown-in vacancy-type defects in poly- and single crystalline silicon investigated by positron annihilation[J]. Eur. Phys. J. Appl. Phys., 2007,37(2): 213-218.

    [6] [6] Lee Y, Lee S, Hwang G S. Effects of vacancy defects on thermal conductivity in crystalline silicon: A nonequilibrium molecular dynamics study[J]. Phys. Rev. B., 2011, 83(12):125202.

    [12] [12] Clark S, Segall M, Pickard C, et al. First principles methods using CASTEP [J]. Zeitschrift für Kristallographie-Crystalline Materials, 2005, 220(5/6): 567-570.

    [13] [13] Perdew J, Burke K, Ernzerhof. Generalized gradient approximation made simple[J]. Phys. Rev. Lett., 1996, 77(18): 3865.

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    YANG Yinghong, ZHANG Rongzhu. Effect of Common Point Defects in Silicon Cells on Device Response Characteristics[J]. Semiconductor Optoelectronics, 2024, 45(2): 200

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    Paper Information

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    Received: Nov. 27, 2023

    Accepted: --

    Published Online: Aug. 14, 2024

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2023112701

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