Chinese Physics B, Volume. 29, Issue 9, (2020)
Flux-to-voltage characteristic simulation of superconducting nanowire interference device
Fig. 1. (a) Three states of nanowire: (i) superconducting state, (ii) hotspot state, (iii) normal state (“latched” state).
Fig. 2. (a) Schematic diagram of two parallel ultrathin superconducting nanowires.
Fig. 3. (a) Schematic diagram of the nanowire interference device with a shunt resistor. It comprises two parallel ultrathin superconducting nanowires shunted with resistor
Fig. 4. (a) Simulation results of current–voltage characteristic with a shunt resistor. Bias current is normalized by switching current of single nanowire
Fig. 5. Flux-to-voltage conversion curves for devices with different values of shunt resistance and nanowire inductance. (a) Curves for different values of shunt resistance. Shunt resistances are selected to be 0.01 ⋅
|
Get Citation
Copy Citation Text
Xing-Yu Zhang, Yong-Liang Wang, Chao-Lin Lv, Li-Xing You, Hao Li, Zhen Wang, Xiao-Ming Xie. Flux-to-voltage characteristic simulation of superconducting nanowire interference device[J]. Chinese Physics B, 2020, 29(9):
Received: Mar. 9, 2020
Accepted: --
Published Online: Apr. 29, 2021
The Author Email: Wang Yong-Liang (lxyou@mail.sim.ac.cn)