Chinese Physics B, Volume. 29, Issue 9, (2020)
Flux-to-voltage characteristic simulation of superconducting nanowire interference device
Inspired by recent discoveries of the quasi-Josephson effect in shunted nanowire devices, we propose a superconducting nanowire interference device in this study, which is a combination of parallel ultrathin superconducting nanowires and a shunt resistor. A simple model based on the switching effect of nanowires and fluxoid quantization effect is developed to describe the behavior of the device. The current–voltage characteristic and flux-to-voltage conversion curves are simulated and discussed to verify the feasibility. Appropriate parameters of the shunt resistor and inductor are deduced for fabricating the devices.
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Xing-Yu Zhang, Yong-Liang Wang, Chao-Lin Lv, Li-Xing You, Hao Li, Zhen Wang, Xiao-Ming Xie. Flux-to-voltage characteristic simulation of superconducting nanowire interference device[J]. Chinese Physics B, 2020, 29(9):
Received: Mar. 9, 2020
Accepted: --
Published Online: Apr. 29, 2021
The Author Email: Wang Yong-Liang (lxyou@mail.sim.ac.cn)