Acta Optica Sinica, Volume. 33, Issue 8, 823004(2013)

Study on All-Inorganic Light Emitting Devices Based on ZnO Nanorods with Modification of SiO2

Ge Lin*, Xu Jianping, Zhang Xiaosong, Luo Chengyuan, Wang Lishi, Li Mengzhen, Ren Zhirui, Chen Yipeng, Wang Youwei, Shi Qingliang, Zhu Mingxue, and Li Lan
Author Affiliations
  • [in Chinese]
  • show less
    References(25)

    [1] [1] M H Huang, S Mao, H Feick, et al.. Room-temperature ultraviolet nanowire nanolasers [J]. Science, 2001, 292(5523): 1897-1899.

    [2] [2] X W Sun, S F Yu, C X Xu, et al.. Room-temperature ultraviolet lasing from zinc oxide microtubes [J]. Jpn J Appl Phys, 2003, 42(2): L1229-L1231.

    [3] [3] S Kishwar, G Tzamalis, O Nur, et al.. Electro-optical and cathodoluminescence properties of low temperature grown ZnO nanorods/p-GaN white light emitting diodes [J]. Phys Status Solidi A, 2010, 207(1): 67-72.

    [4] [4] A Javey, S Nam, R S Friedman, et al.. Layer-by-layer assembly of nanowires for three-dimensional, multifunctional electronics [J]. Nano Lett, 2007, 7(3): 773-777.

    [6] [6] R Deng, B Yao, Y F Li, et al.. X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset [J]. Appl Phys Lett, 2009, 94(2): 022108.

    [8] [8] Y Q Bie, Z M Liao, H Z Zhang, et al.. Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions [J]. Adv Mater, 2011, 23(5): 649-653.

    [9] [9] C Y Chang, F C Tsao, C J Pan, et al.. Electroluminescence from ZnO nanowire/ polymer composite p-n junction [J]. Appl Phys Lett, 2006, 88(17): 173503.

    [10] [10] X Sun, J Huang, J Wang, et al.. A ZnO nanorod inorganic/organic heterostructure light-emitting diode emitting at 342 nm [J]. Nano Lett, 2008, 8(4): 1219-1223.

    [11] [11] S L Zhao, P Z Kan, Z Xu, et al.. Electroluminescence of ZnO nanorods/ MEH-PPV heterostructure devices [J]. Org Electron, 2010, 11(5): 789-793.

    [12] [12] Y Sato, H Kanai. Stability of organic electroluminescent diodes [J]. Mol Cryst Liq Cryst, 1994, 252(53): 435-442.

    [13] [13] B S Mashford, T L Nguyen, G J Wilson, et al.. Al-inorganic quantum-dot light-emitting devices formed via low-cost, wet-chemical processing [J]. J Mater Chem, 2010, 20(1): 167-172.

    [14] [14] T Omata, Y Tani, S Kobayashi, et al.. Ultraviolet electroluminescence from colloidal ZnO quantum dots in an all-inorganic multilayer light-emitting device [J]. Appl Phys Lett, 2012, 100(6): 061104.

    [15] [15] V Wood, M Panzer, J Halpert, et al.. Selection of metal oxide charge transport layers for colloidal quantum dot LEDs [J]. ACS Nano, 2009, 3(11): 3581-3586.

    [16] [16] X Ma, P Chen, D Li, et al.. Electrophotoluminescence of ZnO film [J]. Appl Phys Lett, 2007, 91(2): 021105.

    [17] [17] X Ma, J Pan, P Chen, et al.. Room temperature electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si [J]. Opt Express, 2009, 17(16): 14426-14433.

    [18] [18] X Yan, Z Li, R Chen, et al.. Template growth of ZnO nanorods and microrods with controllable densities [J]. Cryst Growth Des, 2008, 8(7): 2406-2410.

    [20] [20] Z Yang, Z Yu, H Chen, et al.. Growth of amorphous SiO2 nano-wires on pre-oxidized silicon substrate via chemical vapor deposition[J]. J Non-Cryst Solids, 2008, 354(15-16): 1731-1735.

    [21] [21] Y Yang, X Chen, Y Feng, et al.. Physical mechanism of blue-shift of UV luminescence of a single pencil-like ZnO nanowire [J]. Nano Lett, 2007, 7(12): 3879-3883.

    [22] [22] N Wang, Y Yang, G Yang. Indium oxide-zinc oxide nanosized heterostructure and whispering gallery mode luminescence emission [J]. J Phys Chem C, 2009, 113(35): 15480-15483.

    [23] [23] T DiStefano, D Eastman. The band edge of amorphous SiO2 by photoinjection and photoconductivity measurements [J]. Solid State Commun, 1971, 9(24): 2259-2261.

    [24] [24] Xu Chunxiang, Lou Zhidong, Xu Xurong. The direct evidence of the accelerating action of SiO2 in TFEL devices [J]. Chin J Lumin, 1995, 16(3): 187-191.

    [25] [25] Z Fu, B Yang, L Li, et al.. An intense ultraviolet photoluminescence in sol-gel ZnO-SiO2 nanocomposites [J]. J Phys Condens Matter, 2003, 15(17): 2867-2873.

    CLP Journals

    [1] Zhao Fengqi, Pan Hongyu. Binding Energy of Bound Polaron and the Polaron Shift as the Functions of Composition x in Wurtzite ZnO/MgxZn1-xO Quantum Well Under the Built-in Electric Field[J]. Laser & Optoelectronics Progress, 2016, 53(9): 91602

    Tools

    Get Citation

    Copy Citation Text

    Ge Lin, Xu Jianping, Zhang Xiaosong, Luo Chengyuan, Wang Lishi, Li Mengzhen, Ren Zhirui, Chen Yipeng, Wang Youwei, Shi Qingliang, Zhu Mingxue, Li Lan. Study on All-Inorganic Light Emitting Devices Based on ZnO Nanorods with Modification of SiO2[J]. Acta Optica Sinica, 2013, 33(8): 823004

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Optical Devices

    Received: Mar. 4, 2013

    Accepted: --

    Published Online: Jul. 9, 2013

    The Author Email: Lin Ge (jsgelin@163.com)

    DOI:10.3788/aos201333.0823004

    Topics