Acta Physica Sinica, Volume. 68, Issue 12, 120701-1(2019)
Fig. 1. History of infrared photodetectors.红外探测器发展历史
Fig. 6. FDTD numerical simulations show the formation of lateral electric field modes around holes when illuminated by a normal incident beam of light[24]: (a) Cylindrical holes; (b) funnel-shaped holes. Top,
Fig. 7. Representation of surface plasmon polaritons: Under the excition of injection light, the density of electrons in the surface of metal experience a little change, which correspond to the collective excition modes of surface electrons.表面等离激元波示意图(金属表面的电子对入射光的响应产生了表面几十纳米内的电子密度的轻微扰动, 构成了金属中表面电子的集体激发模式)
Fig. 8. (a) Fabrication steps of the metal grating; (b) SEM photograph of GaAs; (c) streamline diagram of Poynting vector. At the resonance wavelength of 10.05 μm, the light field is almost completely confined into the slit[31]. (a)金属光栅制备过程; (b) GaAs的扫描电子显微镜(scanning electron microscope, SEM)照片; (c)坡印亭矢量的流线图, 可见在共振波长10.05 μm处, 光场被几乎全被限制到了狭缝中[31]
Fig. 9. (a) Schematic diagram of the SPP structure with the metal hole array on the quantum dot infrared detector[32]; (b) SEM photograph of the metal hole array SPP structure[32]; (c) SEM photograph of the bull's eye detector[33]; (d) the bull's eye structure with slit[34]; copyright 2011 American Chemical Society (e) schematic diagram of graphene-surface plasmon photodetector[35]; (f) polarization dependent multi-wavelength SPP structure[36]. (a)量子点红外探测器上覆盖金属孔洞阵列SPP结构的器件示意图[32]; (b)金属孔洞阵列SPP结构的SEM照片[32]; (c)牛眼探测器的SEM照片[33]; (d)劈裂牛眼结构[34]; (e)石墨烯表面等离激元器件结构示意图[35]; (f)偏振多波长SPP结构[36]
Fig. 10. (a) Absorption spectra of TiS2 nanosheets; (b) quantum well infrared detectors enhanced by LSP and SPP together; (c),(d) electric field distribution of nanosheets of LSP resonance and non-resonant mode[41]; (e) ultra-wide spectrum graphene detector auxiliary by silicon quantum dots[42]; (f)−(h) Au arrays enhanced MoS2 phototransistors[40]. (a) TiS2纳米片的吸收谱; (b) LSP与SPP共同增强量子阱红外探测器; (c), (d)纳米片的LSP共振与非共振模式下的电场分布图[41]; (e)硅量子点辅助的超宽谱石墨烯探测器[42]; (f)—(h)金阵列增强型MoS2光电二极管[40]
Fig. 11. The band diagram of plasmon hot electrons. Schottky barrier is
Fig. 12. (a) Schematic diagram of LSP-based photodetector; (b) SEM photo of photodetector based on LSP[43]; (c) schematic diagram of photodetector based on SPP; (d) SEM photograph of photodetector based on SPP thermoelectron; (e) photocurrent mapping of SPP plasmon thermal electronic devices[44]. (a)基于LSP的光电探测器结构示意图; (b)基于LSP的光电探测器SEM照片[43]; (c)基于SPP的光电探测器结构示意图; (d)基于SPP热电子的光电探测器SEM照片; (e) SPP等离激元热电子器件的光电流Mapping图[44]
Fig. 13. Band diagram of quantum cascade detectors.量子级联探测器能带结构示意图
Fig. 15. Designs of broadband spectrum QCDs: (a) Double quantum wells absorption; (b) mini-band absorption; (c) low barrier design.宽光谱量子级联探测器设计 (a)双阱吸收; (b)微带吸收; (c)低势垒
Fig. 17. Band diagram of interband cascade detectors.带间级联探测器能带结构示意图
Fig. 20. Comparison of peak detectivity among typical photodetector at room temperature.常温工作时典型探测器峰值探测率对比
Fig. 21. (a) Energy band diagram for interpretation of optical gain in graphene/quantum dots heterostructure[74]; (b) schematic diagram of CMOS integrated graphene/quantum dots focal array plane[75]; (c) schematic diagram of mid-infrared pure black phosphorous photodetector[73]; (d) high gain and high responsivity InAs nanowire[76]; (e) high performance mid-wavelength InAs nanowire[77]. (a)石墨烯/量子点复合结构增益原理图[74]; (b) CMOS集成的石墨烯/量子点焦平面结构示意图[75]; (c)室温中红外高增益黑磷探测器结构示意图[73]; (d)室温高增益高响应InAs纳米线[76]; (e)室温高性能中红外InAs纳米线[77]
Fig. 22. (a) Schematic diagram of photovoltage field-effect transistors[78]; (b) gain-bandwidth product for different types of photodetectors[65]; (c) schematic diagram of mid-infrared graphene detector through interfacial gating of InSb; (d) the photoresponse of device in (c) at various temperatures[78,80]. (a)光伏场效应晶体管示意图[78]; (b)不同器件的增益带宽积[65]; (c) InSb作光敏介质调控石墨烯器件结构示意图; (d)器件不同工作温度下的响应[78,80]
Fig. 23. (a) The ferroelectric hysteresis loop 300 nm P(VDF-TrFE) film capacitor; (b) the
Fig. 25. (a) Structure diagram of graphene/Ta2O5/graphene tunneling diode; (b) infrared responsivity curve of variable incident power with 3.2 μm wavelength; (c) h-BN/b-P/h-BN vertical heterojunction photodetectors; (d) 7.7 μm infrared responsivity of h-BN/b-P/h-BN vertical heterojunction photodetectors[93,94]. (a) Graphene/Ta2O5/graphene隧道结红外探测器结构示意图; (b)多种功率下红外响应曲线, 入射光波长3.2 μm; (c) h-BN/b-P/h-BN垂直异质结的红外探测器; (d) h-BN/b-P/h-BN垂直异质结器件7.7 μm红外光电响应[93,94]
Fig. 26. (a) Structure diagram of p-g-n heterojunction photodetectors; (b) responsivity of p-g-n heterojunction photodetectors; (c) absorption spectrum of b-As0.83P0.17; (d) mid-infrared response of b-AsP/MoS2 heterojunction photodetectors[98]. (a) p-g-n异质结光电探测器的结构示意图; (b) p-g-n异质结光电探测器的光电响应; (c)黑砷磷b-As0.83P0.17样品的光学吸收谱, 插图为黑砷磷合金b-AsP/MoS2异质结器件结构示意图; (d) b-AsP/MoS2异质结光电探测器在中波红外的光电响应[98]
Fig. 28. The tunneling effect (a) and avalanche effect (b) in p-n junction under large reverse bias.传统光伏型红外探测器 (a)和雪崩光电探测器(b)工作时的能带结构图
Fig. 30. (a)
Fig. 31. The diagram of ionization process: (a) Hole injection; (b) electron injection.离化过程能带结构示意图 (a)空穴注入型; (b)电子注入型
Fig. 39. Structure and band diagram of nBn devices.nBn型器件和能带结构示意图
Fig. 42. For InSb nBn infrared photodetectors, the dark current characteristics at (a) 77 K and (b) 104−170 K, (c) the spectral response at 77 K, and (d) the dark current characteristics at different temperatures and structures[128,129]. nBn结构InSb探测器 (a) 77 K下暗电流特性; (b) 104—170 K暗电流特性; (c) 77 K下光谱响应; (d)不同温度和结构下的暗电流特性[128,129]
Fig. 46. 128 × 128 long-wavelength/mid-wavelength two-color HgCdTe infrared focal plane: (a) Dark current characteristic; (b) spectral response; (c) two-color imaging.128 × 128长波/中波双色碲镉汞红外焦平面探测器 (a)暗电流特性; (b)中波/长波光谱响应曲线; (c)中波长波成像效果
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Wei-Da Hu, Qing Li, Xiao-Shuang Chen, Wei Lu.
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Received: Mar. 1, 2019
Accepted: --
Published Online: Oct. 30, 2019
The Author Email: Lu Wei (luwei@mail.sitp.ac.cn)