Chinese Journal of Quantum Electronics, Volume. 29, Issue 3, 292(2012)

Study of all-solid-state 1.3 μm gain-switched laser

Jun-wen XUE*... Xue-dan PEI, Bing-hua SU, Hui-yuan ZHAO and Lu SUN |Show fewer author(s)
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    References(13)

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    [2] [2] Savitski V G, Malyarevich A M, Yumashev K V, et al. Diode-pumped Nd:YVO4 and Nd:KGd(WO4 )2 1.3 μm lasers passively Q-switched with PbS-doped glass [J]. Appl. Phys. B, 2003, 79: 253-256.

    [3] [3] Gerschütz F, Fischer M, Koeth J, et al. 1.3 μm quantum dot laser in coupled-cavity-injection-grating design with bandwidth of 20 GHz under direct modulation [J]. Opt. Expr., 2008, 16(8): 5596-5601.

    [4] [4] Katsuaki T, Denis G, Damien B, et al. Electrically pumped 1.3 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer [J]. Opt. Expr., 2010, 18(10): 10604-10608.

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    [6] [6] Jabczynski J K, Zendzian W, Mierczyk Z, et al. Chromium-doped LiCAF laser passively Q switched with a V3 + :YAG crystal [J]. Appl. Opt., 2001, 40(36): 6638-6645.

    [7] [7] Agnesi A, Guandalimi A, Reali G, et al. Diode pumped Nd:YVO4 laser at 1.34 μm Q-switched and mode locked by a V3 + :YAG saturable absorber [J]. Opt. Comm., 2001, 194: 429-433.

    [8] [8] Podlipensky A V, Yumashev K V, Kuleshov N V, et al. Passive Q-switching of 1.44 μm and 1.34 μm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber [J]. Appl. Phys. B, 2003, 76: 245-247.

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    XUE Jun-wen, PEI Xue-dan, SU Bing-hua, ZHAO Hui-yuan, SUN Lu. Study of all-solid-state 1.3 μm gain-switched laser[J]. Chinese Journal of Quantum Electronics, 2012, 29(3): 292

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    Paper Information

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    Received: Nov. 15, 2011

    Accepted: --

    Published Online: May. 28, 2012

    The Author Email: Jun-wen XUE (xuejunwen001@126.com)

    DOI:10.3969/j.issn.1007-5461. 2012.03.006

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