Chinese Optics Letters, Volume. 16, Issue 1, 011402(2018)

Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs/GaAs quantum well structure

Yan Jia1, Qingnan Yu1, Fang Li1, Mingqing Wang1, Wei Lu1, Jian Zhang2, Xing Zhang2, Yongqiang Ning2, and Jian Wu1、*
Author Affiliations
  • 1Department of Applied Physics, Beihang University, Beijing 100191, China
  • 2State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130000, China
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    [18] A. Jung, A. G. Taboada, W. Stumpf, T. Kreiliger, F. Isa, G. Isella, E. B. Meier, H. von Känel. Appl. Phys. Lett., 118, 075701(2015).

    [22] A. C. Larry, C. Scott. Diode Lasers and Photonic Integrated Circuits(2012).

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    Yan Jia, Qingnan Yu, Fang Li, Mingqing Wang, Wei Lu, Jian Zhang, Xing Zhang, Yongqiang Ning, Jian Wu. Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs/GaAs quantum well structure[J]. Chinese Optics Letters, 2018, 16(1): 011402

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Sep. 12, 2017

    Accepted: Nov. 10, 2017

    Published Online: Jul. 17, 2018

    The Author Email: Jian Wu (jwu2@buaa.edu.cn)

    DOI:10.3788/COL201816.011402

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