Semiconductor Optoelectronics, Volume. 44, Issue 4, 549(2024)

Research on High-Speed Circuit of Line-Mode HgCdTe APD

SUN Duo1...2, LIANG Qinghua1 and DING Ruijun1 |Show fewer author(s)
Author Affiliations
  • 1National Key Lab. of Infrared Detection Technologies, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, CHN
  • 2School of Information Science and Technol., ShanghaiTech University, Shanghai 201210, CHN
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    References(5)

    [2] [2] Beck J, Welch T, Mitra P, et al. A highly sensitive multi-element HgCdTe e-APD detector for IPDA lidar applications[J]. J. Electron. Mater., 2014, 3(43): 2970-2977.

    [3] [3] Jeff Beck, Milton Woodall. Gated IR imaging with 128×128 HgCdTe electron avalanche photodiode FPA[J]. J. Electron. Mater., 2008, 37(9): 3622-3629.

    [4] [4] Sun X L, Cremons D R, Mazarico E, et al. Small all-range lidar for asteroid and comet core missions[J]. Sensors, 2021, 21(9): 3081-3090.

    [5] [5] Jeffrey D. Beck, Richard Scritchfield. Linear mode photo counting with the noiseless gain HgCdTe e-APD[J]. Proc. SPIE, 2011, 43(23): 8033.

    [8] [8] Lu Z, Yeo K S, Lim W M, et al. Design of a CMOS broadband transimpedance amplifier with active feedback[J]. IEEE Trans. Very Large Scale Integr. (VLSI) Systems, 2010, 18(3): 461-472.

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    SUN Duo, LIANG Qinghua, DING Ruijun. Research on High-Speed Circuit of Line-Mode HgCdTe APD[J]. Semiconductor Optoelectronics, 2024, 44(4): 549

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    Paper Information

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    Received: Mar. 7, 2024

    Accepted: Feb. 13, 2025

    Published Online: Feb. 13, 2025

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2024030701

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