Journal of Semiconductors, Volume. 44, Issue 5, 052901(2023)

Squeezed state generation using cryogenic InP HEMT nonlinearity

Ahmad Salmanogli*
Author Affiliations
  • Engineering Faculty, Electrical and Electronic Department, Cankaya University, Ankara, Turkey
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    Figures & Tables(8)
    (Color online) Schematic of the system containing two external oscillators coupling through a nonlinear device, inset figure: nonlinear device internal circuit.
    (Color online) A simplified version of the circuit to estimate the transfer function.
    Step response of the circuit.
    (Color online) Complete system model; LC1 coupling to LC2 through InP HEMT transistor operating at 5 K.
    (Color online) (a) Quadrature variance versusgm. (b) Second-order correlation function versusgm.Cf = 0.02 pF,gm3 = 1200 mA/V3,gm2 = 200 mA/V2,VRF = 1μV,κ =κ1=κ2= 0.001ω.
    (Color online) (a) Quadrature variance versusgm, (b) second-order correlation function versusgm for different gm3(mA/V3);Cf = 0.02 pF,gm2 = 200 mA/V2,VRF = 1μV,κ = 0.001ω.
    (Color online) Second-order correlation function versusgm. (a)gm2 effect. (b) Feedback capacitance effect (Cf). (c) LC resonator decay rate effect (κ). (d) Input RF source amplitude effect (VRF).gm3 = 1200 mA/V3.
    • Table 1. Values for the small signal model of the 2 × 50μm InP HEMT at 5 K[31-33].

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      Table 1. Values for the small signal model of the 2 × 50μm InP HEMT at 5 K[31-33].

      Stands forValue
      RgGate resistance0.3 Ω
      LgGate inductance75 pH
      LdDrain inductance70 pH
      CgsGate–source capacitance69 fF
      CdsDrain–source capacitance29 fF
      CgdGate–drain capacitance19 fF
      RgsGate-source resistance4 Ω
      RgdGate–drain resistance35 Ω
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    Ahmad Salmanogli. Squeezed state generation using cryogenic InP HEMT nonlinearity[J]. Journal of Semiconductors, 2023, 44(5): 052901

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    Paper Information

    Category: Articles

    Received: Nov. 11, 2022

    Accepted: --

    Published Online: Jun. 15, 2023

    The Author Email: Salmanogli Ahmad (salmanogli@cankaya.edu.tr)

    DOI:10.1088/1674-4926/44/5/052901

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