Journal of Semiconductors, Volume. 44, Issue 5, 052901(2023)
Squeezed state generation using cryogenic InP HEMT nonlinearity
Fig. 1. (Color online) Schematic of the system containing two external oscillators coupling through a nonlinear device, inset figure: nonlinear device internal circuit.
Fig. 1. (Color online) A simplified version of the circuit to estimate the transfer function.
Fig. 2. (Color online) Complete system model; LC1 coupling to LC2 through InP HEMT transistor operating at 5 K.
Fig. 3. (Color online) (a) Quadrature variance versusgm. (b) Second-order correlation function versusgm.Cf = 0.02 pF,gm3 = 1200 mA/V3,gm2 = 200 mA/V2,VRF = 1μV,κ =κ1=κ2= 0.001ω.
Fig. 4. (Color online) (a) Quadrature variance versusgm, (b) second-order correlation function versusgm for different gm3(mA/V3);Cf = 0.02 pF,gm2 = 200 mA/V2,VRF = 1μV,κ = 0.001ω.
Fig. 5. (Color online) Second-order correlation function versusgm. (a)gm2 effect. (b) Feedback capacitance effect (Cf). (c) LC resonator decay rate effect (κ). (d) Input RF source amplitude effect (VRF).gm3 = 1200 mA/V3.
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Ahmad Salmanogli. Squeezed state generation using cryogenic InP HEMT nonlinearity[J]. Journal of Semiconductors, 2023, 44(5): 052901
Category: Articles
Received: Nov. 11, 2022
Accepted: --
Published Online: Jun. 15, 2023
The Author Email: Salmanogli Ahmad (salmanogli@cankaya.edu.tr)